Zobrazeno 1 - 10
of 154
pro vyhledávání: '"J. Cott"'
Publikováno v:
Physics Open, Vol 20, Iss , Pp 100227- (2024)
Inertial sensors that measure the acceleration of ultracold atoms promise unrivalled accuracy compared to classical equivalents. However, atomic systems are sensitive to various perturbations, including magnetic fields, which can introduce measuremen
Externí odkaz:
https://doaj.org/article/37498229ff28412faf3f73e4b0ba8a87
Autor:
M. Freitas, F. Dias de Castro, V. Macedo Silva, C. Arieira, T. Cúrdia Gonçalves, S. Leite, M. J. Moreira, J. Cotter
Publikováno v:
BMC Gastroenterology, Vol 22, Iss 1, Pp 1-10 (2022)
Abstract Background Intestinal ultrasound (IUS) is an increasingly used non-invasive tool to evaluate Crohn’s disease (CD) activity. Recently, two IUS scores that evaluate inflammatory activity have emerged: the Simple Ultrasound Activity Score for
Externí odkaz:
https://doaj.org/article/0c5c81fc6a904843a8e4fe88bb07c86c
Autor:
C. Quantin, E. Benzenine, M. Hägi, B. Auverlot, M. Abrahamowicz, J. Cottenet, E. Fournier, C. Binquet, D. Compain, E. Monnet, A. M. Bouvier, A. Danzon
Publikováno v:
Journal of Cancer Epidemiology, Vol 2012 (2012)
Background. The aim of the study was to assess the accuracy of the colorectal-cancer incidence estimated from administrative data. Methods. We selected potential incident colorectal-cancer cases in 2004-2005 French administrative data, using two alte
Externí odkaz:
https://doaj.org/article/1cf4db84da2a43c081d887bd1c3cafc0
Publikováno v:
In Electrochimica Acta 20 June 2014 132:574-582
Autor:
Harold Dekkers, Frank Holsteyns, Lars-Ake Ragnarsson, Naoto Horiguchi, Boon Teik Chan, Hideaki Iino, Yusuke Oniki, Daire J. Cott, Efrain Altamirano Sanchez, Toby Hopf, Farid Sebaai, Eugenio Dentoni Litta
Publikováno v:
Solid State Phenomena. 314:119-126
This paper addresses challenges and solutions of replacement metal gate of gate-all-around nanosheet devices. The unit process and integration solutions for the metal gate patterning as well as interface dipole patterning to offer multiple threshold
Autor:
Guillaume Boccardi, Hiroaki Arimura, Roger Loo, Samuel Suhard, Daire J. Cott, Thierry Conard, Naoto Horiguchi, L.-A. Ragnarsson, V. De Heyn, Jerome Mitard, Dan Mocuta, Liesbeth Witters, H. Dekkers, D. H. van Dorp, Nadine Collaert, Kurt Wostyn
Publikováno v:
IEEE Transactions on Electron Devices. 66:5387-5392
This article reports Si-passivated Ge nFinFETs with significantly improved GmSAT/SSSAT and positive bias temperature instability (PBTI) reliability enabled by an improved replacement metal gate (RMG) high- ${k}$ last process. SiO2 dummy gate oxide (D
Autor:
D. Lin, Benjamin Groven, Inge Asselberghs, Xiangyu Wu, Daire J. Cott, Iuliana Radu, P. Morin, Vivek Mootheri
Publikováno v:
DRC
Field-effect device concepts with 2-D semiconductors as channels have been proposed as an alternative to Si based CMOS beyond the 3nm node. A MX 2 MOS capacitor differs from its Si counterpart primarily in electrostatics due to its ultra-thin, fully
Autor:
Didit Yudistira, Daire J. Cott, Alexey Milenin, Marianna Pantouvaki, J. Van Campenhout, Cheng-Han Wu, Steven Brems, Cedric Huyghebaert, Kevin Vandersmissen, Alba Centeno, A. Maestre
Publikováno v:
VLSI Circuits
We demonstrate graphene electro-absorption modulators (EAM) integrated on 300mm wafers. The integration is based on imec’s 300mm silicon photonics platform and the full integration sequence is using standard CMOS production tools expect for the 6-i
Autor:
Yuanyuan Shi, Benjamin Groven, Dennis Lin, Daire J. Cott, Stephanie Sergeant, Inge Asselberghs, Iuliana Radu, Quentin Smets, Surajit Sutar, Xiangyu Wu, Jean-Francois de Marneffe
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Processing and characterization of double gate CVD WS2 devices are presented in this work. By combining H2 plasma cleaning and trimethylaluminium (TMA) soak initiated ALD process, double gate (DG) WS2 devices with clean and high-quality interface is
Autor:
Surajit Sutar, Stephanie Sergeant, Benjamin Groven, Iuliana Radu, Quentin Smets, Xiangyu Wu, Daire J. Cott, Dennis Lin, Inge Asselberghs, Devin Verreck
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We have engineered dual gate WS2 transistors with scaled top and back gate stacks based on a surface physisorption ALD approach for advanced logic applications. Connected dual gate MOSFET operation with a 2ML WS2 channel reaches 210μA/um drain curre