Zobrazeno 1 - 10
of 53
pro vyhledávání: '"J. Ch. Garcia"'
Publikováno v:
Journal of Crystal Growth. :891-895
Low-resistivity Ga(In)As tunnel junctions have been used to interconnect epitaxially two separate confinement heterostructure (SCH) InGaAs/GaAlAs laser structures. Laser structures consist of a 0.2 μm GaAs optical cavity containing three Ga 0.88 In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d74b3cca140be494aac0d6a77a7fbb9
https://doi.org/10.1016/s0022-0248(98)01489-4
https://doi.org/10.1016/s0022-0248(98)01489-4
Publikováno v:
Journal of Crystal Growth. :614-618
In situ AsCl3 etching of (1 1 1)A, (1 1 1)B and (0 0 1) GaAs layers has been studied as a function of substrate temperature in the range of 450–600°C. The (1 1 1)A and (0 0 1) show qualitatively the same etching behavior. For both substrates, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ec62c4af72ba486b2ec4b449009480b
https://doi.org/10.1016/s0022-0248(98)01422-5
https://doi.org/10.1016/s0022-0248(98)01422-5
Autor:
J. Ch. Garcia
Publikováno v:
Journal of Crystal Growth. 188:343-348
In the last decade, development of growth technologies has been the main factor driving the advancement of III–V semiconductor electronic and optoelectronic devices. Today, epitaxial growth technologies can be classified into two types: the ultra h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853e9cae55c3bd1fe94eaac765376635
https://doi.org/10.1016/s0022-0248(98)00081-5
https://doi.org/10.1016/s0022-0248(98)00081-5
Publikováno v:
Journal of Electronic Materials. 27:442-445
We report on the complete characterization of a hydride- and hydrogen-free chemical beam epitaxy (CBE) process for the realization of GaAs/GaInP heterojunction bipolar transistors. Alternative group V sources tertiarybutylarsine, tertiarybutylphosphi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c9f738ce4efc4d79847948918ee526b
https://doi.org/10.1007/s11664-998-0175-3
https://doi.org/10.1007/s11664-998-0175-3
Chemical beam epitaxy growth of tensile-strained quantum well heterostructures for laser application
Publikováno v:
Journal of Crystal Growth. :1265-1269
We report on the chemical beam epitaxy growth conditions of high-quality Ga 1-x Al x As (x:0.2-0.6) and tensile-strained GaAs 1-y P y quantum wells (y: 0.05-0.29) on GaAs(0 0 1) surfaces using trimethylamine alane and alternative precursors of group
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a97ecf4853e4b77f734d91d42a8eec5c
https://doi.org/10.1016/s0022-0248(96)01017-2
https://doi.org/10.1016/s0022-0248(96)01017-2
Publikováno v:
Journal of Applied Physics. 69:3297-3302
The growth rates of GaP and InP deposited by metalorganic molecular beam epitaxy using triethylgallium, trimethylindium, and precracked phosphine have been studied by reflection high energy electron diffraction and related to composition variations o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2d9c0ea232c62408ff3faa532b74c4
https://doi.org/10.1063/1.348551
https://doi.org/10.1063/1.348551
Publikováno v:
Applied Physics Letters. 74:3972-3974
Indium surface segregation during the growth of Ga1−xInxAs by chemical beam epitaxy is evidenced in real time by reflection high-energy electron diffraction. An efficient way to suppress the compositional broadening of GaAs on the GaInAs interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b8744534c289eb54170e41d8df11904
https://doi.org/10.1063/1.124240
https://doi.org/10.1063/1.124240
Publikováno v:
Applied Physics Letters. 64:1371-1373
We have investigated the p‐type doping of GaInP grown by chemical beam epitaxy using bis‐cyclopentadienyl magnesium (Cp2Mg). Hole concentrations up to the 1018 cm−3 level have been achieved for substrate temperature as high as 550 °C and Mg in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::591d6721a80299ce5d303c010c7fb718
https://doi.org/10.1063/1.111938
https://doi.org/10.1063/1.111938
Publikováno v:
Applied Physics Letters. 58:1973-1975
We report in this letter the sulfur doping of GaAs and Ga0.5In0.5P layers grown by metalorganic molecular beam epitaxy using a 1000 ppm hydrogen sulfide diluted in hydrogen dopant source. No precracking of H2S molecules is necessary to achieve effici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12c7166e38aec436a64afc94b2f2ad34
https://doi.org/10.1063/1.105036
https://doi.org/10.1063/1.105036
Publikováno v:
MRS Proceedings. 241
The low temperature growth procedure used in the case of GaAs to introduce high concentrations of deep traps such as arsenic antisite defects has been extended to the growth of InP by gas source molecular beam epitaxy. The low temperature growth of I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30b68e4bfa054376d76846f629038220
https://doi.org/10.1557/proc-241-277
https://doi.org/10.1557/proc-241-277