Zobrazeno 1 - 10
of 24
pro vyhledávání: '"J. Carlos Rojo"'
Autor:
Francesc Díaz, Oleksandr V. Bilousov, Magdalena Aguiló, J. Carlos Rojo, Joan J. Carvajal, Dominique Drouin
Publikováno v:
Microscopy and Microanalysis. 18:905-911
We present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical v
Autor:
Joan J. Carvajal, J. Carlos Rojo
Publikováno v:
Crystal Growth & Design. 9:320-326
The influence of different parameters, such as temperature, flow rate of NH3, and pressure, in the crystal growth process of GaN micron-size nanoporous particles through the direct reaction of Ga and NH3 has been studied. Temperature influences poros
Publikováno v:
Chemistry of Materials. 19:6543-6547
Er-doped GaN submicron rods have been synthesized on silicon (001) by the direct reaction of gallium and ammonia in a CVD system. Green and red emissions at room temperature coming from the rods with excitation below the energy of the bandgap of the
Autor:
Daniel D. Koleske, J. W. Yang, J. Carlos Rojo, R. Gaska, M.A. Khan, Michael Shur, Leo J. Schowalter
Publikováno v:
Journal of Crystal Growth. 240:508-512
A comparative study of epitaxy of AlN, GaN and their alloys, grown on c -axis and off-axis substrates of single-crystal aluminum nitride has been carried out. Growth on off-axis (>30°) substrates appears to result in rough surfaces and the absence o
Autor:
Kenneth E. Morgan, J. Carlos Rojo, Michael Dudley, Glen A. Slack, Balaji Raghothamachar, Leo J. Schowalter
Publikováno v:
Journal of Crystal Growth. 231:317-321
High-quality, bulk aluminum nitride crystal grains exceeding 1 cm in dimension have been obtained using a self-seeded sublimation–recondensation growth technique at 0.9 mm/h driving rate. X-ray double crystal diffraction and topography show a full-
Autor:
Leo J. Schowalter, Nikolai Yakolev, Glen A. Slack, Katherine Dovidenko, Ishwara B. Bhat, J. Carlos Rojo, Y. Shusterman, R. Wang
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:445-451
Large (up to 10mm diameter) aluminum nitride (AlN) boules have been grown by the sublimation-recondensation method to study the preparation of high-quality single crystal substrates. The growth mechanism of the boules has been studied using AFM. It h
Publikováno v:
Journal of Crystal Growth. 200:329-334
A modification of the Czochralski growth system consisting of a circular disk attached to the pulling rod has been used during the shouldering of Bi12SiO20 single crystals. Experimental results show significant changes to the melt–crystal interface
On the formation of rotational spoke patterns during the Czochralski growth of bismuth silicon oxide
Autor:
Jeffrey J. Derby, J. Carlos Rojo
Publikováno v:
Journal of Crystal Growth. :154-160
High-resolution calculations are performed using a parallel finite element method to simulate combined rotational and buoyant flows of molten bismuth silicon oxide during Czochralski crystal growth. For the first time, spoke patterns are predicted al
Publikováno v:
Experts@Minnesota
Scopus-Elsevier
Scopus-Elsevier
We describe massively parallel finite element compulations of fluid dynamics for several crystal growth systems. Examples are presented of how large-scale numerical simulations have been used to gain insights to the workings of several processes, spe
Autor:
J. Carlos Rojo, Douglas M. Ruthven
Publikováno v:
The Canadian Journal of Chemical Engineering. 68:795-798
A simple analytic solution has been derived for the temperature response of a non-isothermal adsorption column in which a small concentration of an irreversibly adsorbed species is removed. The model is shown to provide a reasonable representation of