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Akademický článek
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Publikováno v:
physica status solidi (a). 176:493-496
We have grown cubic GaN on GaAs(001) substrates by MOCVD using a double step process with a buffer deposition at 400 °C. The purpose of the buffer deposited at very low temperature is to prevent GaAs decomposition at growth temperature. We have focu
Autor:
J. Calas, René Berjoan, M. Averous, A Dollet, N. Moreaud, Pierre Masri, G Chaix, M. Rouhani Laridjani, C Dupuy
Publikováno v:
Materials Science and Engineering: B. :535-538
We demonstrate that the S-correlated theory of misfit induced superstructures and its continuity criteria, defined within the framework of the elasticity theory, enables to predict the composition of buffer layers which can optimize the 3C–SiC/Si i
Publikováno v:
Materials Science Forum. :315-320
Publikováno v:
Solid State Communications. 105:229-234
We present an experimental and theoretical study of optical and magneto-optical properties of excitons in strained layer ZnCdSeZnSe superlattices. The optical characterizations of these structures are based on photoluminescence and reflectivity me
Publikováno v:
Materials Science and Engineering: B. 43:129-132
We report on optical and magneto-optical studies of a ZnCdSe-ZnSe strained layer superlattice. This structure was grown by metal-organic vapour phase epitaxy (MOVPE) and consisted of 40 periods of 72 A ZnCdSe layer and 49 A ZnSe layer with cadmium co
Autor:
J. Calas, M. Averous, Roger Aulombard, E.L. Ameziane, A. Abounadi, A. Rajira, Thierry Cloitre
Publikováno v:
Materials Science and Engineering: B. 40:80-88
An investigation of the reflectivity and photoluminescence spectra of 40-period Zn1−xCdxSe-ZnSe strained layer superlattices is reported. Superlattices with cadmium composition between 3% and 10% were grown by metal organic vapour phase epitaxy. Th
Publikováno v:
physica status solidi (b). 189:265-276
An investigotion of the photoreflectance and photoluminescence spectra of 45 period ZnS-ZnSe strained layer superlattice having well and barrier widths of 3.3 and 3.7 nm, respectively, is reported. Heavy hole (e 1 hh 1 ) and light hole (e 1 lh 1 ) ex
Autor:
Bernard Gil, M. Averous, R. L. Aulombard, Olivier Briot, Thierry Cloitre, J. Calas, A. Abounadi, N. Briot, M. Di Blasio, D. Bouchara
Publikováno v:
Physical Review B. 50:11677-11683
Thin films of high-quality ZnS were grown on (001) GaAs and (111) Si substrates by metal-organic chemical-vapor deposition. 2-K reflectivity was used to analyze various samples grown at different temperatures. The spectra show two structures at 3.801