Výsledky vyhledávání

High rate reactive ion etch and electron cyclotron resonance etching of GaAs via holes using thick polyimide and photoresist masks

Autor: M. L. Lovejoy, S. H. Kravitz, J. C. Word, D. J. Rieger, Randy J. Shul, A. J. Howard

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:657

High rate etching of through-substrate via holes are essential to many GaAs electronic and photonic device applications. The backside via holes are relevant to monolithic microwave integrated circuits for low inductance grounding and increased circui

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::11dcd139206abc8c87a40bbb62c4cd6e
https://doi.org/10.1116/1.589365

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání