Výsledky vyhledávání - "J. C. Sherbondy"

Autor: R. H. Herlocher, J. C. Sherbondy, R. G. Mazur, L. E. Peitersen, M. Wilson, R. J. Hillard

Publikováno v: The 1998 international conference on characterization and metrology for ULSI technology.

MOSFET threshold voltage (VT) is the most important parameter governing sub-0.25 μm MOS device operation. Critical device performance issues such as speed, off state current and active power depend on VT (1). The primary components that influence VT

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5111f45b0448f2604ad90be70fa0eb6e
https://doi.org/10.1063/1.56802

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Evaluation of diamond-ground beveled surfaces with Hg gate capacitance–voltage and current–voltage

Autor: Robert G. Mazur, Robert J. Hillard, S. R. Weinzierl, J. C. Sherbondy, C. L. Hartford

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:411

The spreading resistance profiling (SRP) method has undergone significant improvements over the last five years, enhancing the techniques’ capability for profiling sub-100 nm junctions. Newly developed procedures for conditioning probes, preparing

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e29b9e266e21e7dcd686e6100d5d320c
https://doi.org/10.1116/1.589822

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