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Autor:
C. Bena, L. Simon, Dominique Aubel, J. C. Perruchetti, Hussein Nasrallah, François Vonau, M. Habar
Using scanning tunneling microscopy (STM) and Fourier Transform STM (FT-STM), we have studied a point defect in an epitaxial graphene sample grown on silicon carbide substrate. This analysis allows us to extract the quasiparticle energy dispersion, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26943c1f4dcb85b1d5fc3ca4573be98e