Zobrazeno 1 - 10
of 27
pro vyhledávání: '"J. C. Oberlin"'
Autor:
Maurice Rivoire, C. Monget, L.G. Gosset, N. Casanova, J. C. Oberlin, M. Broekaart, P. Brun, Joaquim Torres, Vincent Arnal
Publikováno v:
Microelectronic Engineering. 70:274-279
The formation of air gaps by means of a non-conformal chemical vapor deposition (CVD) on patterned wafers was successfully demonstrated using SiOC (K=2.9) as inter-level metal dielectric. This paper presents the results on physical characterization a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d187b7167e9c3d65ec505716a39e2a54
https://doi.org/10.1016/s0167-9317(03)00438-6
https://doi.org/10.1016/s0167-9317(03)00438-6
Autor:
J. C. Oberlin, K.T. Westerduin, A. van Veen, A. Reader, L. V. Jørgensen, O. Dankert, H. Schut
Publikováno v:
Microelectronic Engineering. 33:357-362
The thermal annealing of 1.5 μm thick SiO 2 layers deposited on Si with a High Density Plasma (HDP) has been monitored by Thermal Desorption Spectrometry (TDS), Fourier Transform Infra-Red absorption (FTIR) and Positron Annihilation Doppler Broadeni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e239a315d08a0559400cfa34308c4438
https://doi.org/10.1016/s0167-9317(96)00065-2
https://doi.org/10.1016/s0167-9317(96)00065-2
Publikováno v:
Thin Solid Films
Thin Solid Films, 1994, 241, pp.251
Thin Solid Films, Elsevier, 1994, 241, pp.251
Thin Solid Films, 1994, 241, pp.251
Thin Solid Films, Elsevier, 1994, 241, pp.251
SiO2 films have been deposited using TEOS and oxygen in a microwave excited plasma reactor at a pressure of 3 mTorr. Layers have been characterized using FTIR, refractive index, chemical etch rate, electron spin resonance, Rutherford backscattering s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::108271e7cf0c983447353cfa425ffcad
https://doi.org/10.1016/0040-6090(94)90435-9
https://doi.org/10.1016/0040-6090(94)90435-9
Publikováno v:
Thin Solid Films. 241:301-304
The characteristics of tungsten thin films deposited onto single-crystal Si(100) and silicon dioxide by microwave-plasma-enhanced chemical vapour deposition are studied as a function of the main parameters of the plasma-surface interaction. Throughou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4afccd13a23fb49db8a85a0c1d91369
https://doi.org/10.1016/0040-6090(94)90446-4
https://doi.org/10.1016/0040-6090(94)90446-4
Publikováno v:
Journal of The Electrochemical Society. 138:3450-3456
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f974bc5cb9bb113b9a5d3d1751c08023
https://doi.org/10.1149/1.2085432
https://doi.org/10.1149/1.2085432
Publikováno v:
Journal of Applied Physics. 70:3862-3866
Copper‐containing films were prepared at room temperature by microwave plasma‐enhanced chemical vapor deposition from the Cu(C5H7O2)2‐Ar‐H2 system. The structure and composition of films as well as the concentration depth profiles of Cu, Si,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fac9f5134947978faa69359e612583ff
https://doi.org/10.1063/1.349192
https://doi.org/10.1063/1.349192
Autor:
Olivier Joubert, T. G. Vachette, J. C. Oberlin, J. H. Pelletier, C. Fiori, André Weill, Patrick Jean Paniez, Michel J. Pons
Publikováno v:
Microelectronic Engineering. 13:57-60
The degradation of polymer layers during plasma etching is studied as a function of their viscoelastic properties. Above Tg, the mobility of polymer chains allows the extension of surface degradation to the entire thickness in a self diffusion mechan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4c849bc3d03ae1e486dc6ab26f212c1
https://doi.org/10.1016/0167-9317(91)90047-h
https://doi.org/10.1016/0167-9317(91)90047-h
Publikováno v:
Applied Physics Letters. 65:2021-2023
Deposition of Ta2O5 from Ta(OC2H5)5 and O2 has been studied using a distributed electron cyclotron resonance plasma. Carbon contamination levels as low as 1.5% have been obtained when the Ta(OC2H5)5 vapor is introduced ‘‘downstream’’ away fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca8ad6a919a9076ae32cb92140e96eb4
https://doi.org/10.1063/1.112781
https://doi.org/10.1063/1.112781
Publikováno v:
Ninth IEEE/CHMT International Symposium on Electronic Manufacturing Technology,Competitive Manufacturing for the Next Decade.
New results obtained with polyphenylquinoxaline (PPQ)/Cu multilayer structures are presented. Thermal stability at the Cu/polymer and polymer/Cu interfaces during the polymer curing process is very important to preserve good adhesion between the cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e88012238b005ed46d80861cec1b321
https://doi.org/10.1109/iemt9.1990.115013
https://doi.org/10.1109/iemt9.1990.115013
Publikováno v:
2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479).
This paper presents the influence of topographical parameters such as antenna area, perimeter and aspect ratio, on charging during an ICP oxide deposition process. We show that an extended electron-shading occurs during the beginning of the depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65468b2d265026ba8ace20439f9c104c
https://doi.org/10.1109/ppid.2000.870659
https://doi.org/10.1109/ppid.2000.870659