Zobrazeno 1 - 3
of 3
pro vyhledávání: '"J. C. N. Rijpers"'
Publikováno v:
SPIE Proceedings.
A comparative study of the crystallization behavior of nucleation- and growth-determined materials is presented. The influence of phase change layer thickness, additions and amorphous mark size on the crystallization rate is addressed. The long nucle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80da2d1ec279be83592b689eacfc6059
https://doi.org/10.1117/12.399337
https://doi.org/10.1117/12.399337
Autor:
J. C. N. Rijpers, C. V. J. M. Chang
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:536
The reactive ion etching of AlInGaP and GaAs with a gas mixture of SiCl4, CH4, and Ar is examined. Process parameters such as gas flow composition and radio‐frequency power input are varied. The CH4 flow variation in particular has a substantial ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4556b84450465f0a2300386e6a01a4f7
https://doi.org/10.1116/1.587034
https://doi.org/10.1116/1.587034
Autor:
J. C. N. Rijpers, J. B. A. D. van Zon
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:144-150
Partial pressure gradients in reactive dc‐magnetron sputtering are investigated. The combination of diffusion of the reactive gas (e.g., O2) in a sputtering gas (e.g., Ar) which is in a dynamic equilibrium and the high pumping speed of the substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7b5a2dd4839db6a3356f13af3653f09
https://doi.org/10.1116/1.575743
https://doi.org/10.1116/1.575743