Zobrazeno 1 - 10
of 28
pro vyhledávání: '"J. C. M. Hwang"'
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:791-796
We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD) Al 2 O 3 film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/GaN HEMT o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::010c273f846a905aa834f3ff172e8ce3
https://doi.org/10.1142/s0129156404002843
https://doi.org/10.1142/s0129156404002843
Autor:
Y. Wang, H. S. Djie, B. S. Ooi, J. C. M. Hwang, X. -M. Fang, Y. Wu, J. M. Fastenau, W. K. Liu, G. T. Dang, W. H. Chang
Publikováno v:
Laser Physics. 18:400-402
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::929a4527da5026dcca05fa8e5a889945
https://doi.org/10.1134/s1054660x08040075
https://doi.org/10.1134/s1054660x08040075
Publikováno v:
2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII).
This paper analyzes the dielectric charging effects in microelectromechanical capacitive switches with dielectric-dielectric contacts. Measurements were performed on switches with different contact topologies to characterize the charging of the surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45b357974fd7fc8a705b1b953fa25bd6
https://doi.org/10.1109/transducers.2013.6627040
https://doi.org/10.1109/transducers.2013.6627040
Publikováno v:
Optics express. 18(6)
We report the optical injection modulation of semiconductor lasers by intra-cavity stimulated Raman scattering. This mechanism manifests itself as sharply enhanced modulation bandwidth in InAs/InGaAlAs/InP quantum-dash lasers when the injected photon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d70011b65fc9c67e203017d61494294d
https://pubmed.ncbi.nlm.nih.gov/20389644
https://pubmed.ncbi.nlm.nih.gov/20389644
Publikováno v:
Conference on Lasers and Electro-Optics 2010.
The bandwidth of quantum-dash lasers under optical injection modulation is sharply enhanced when the injection photons are ∼33 meV more energetic than the laser emission. This new bandwidth-enhancement mechanism is attributable to stimulated Raman
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8920d39aec237a9e607c8cd2f9530251
https://doi.org/10.1364/cleo.2010.ctuz2
https://doi.org/10.1364/cleo.2010.ctuz2
Publikováno v:
2008 Conference on Lasers and Electro-Optics.
We demonstrate a viable approach for ultrabroad-stimulated emission in InAs/InAlGaAs quantum-dash laser. This method involves the integration of multiple diodes with respective bandgaps tuned to different energies along a single laser cavity using po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b08cfe4c966b7f11dd79251711ea160
https://doi.org/10.1109/cleo.2008.4551559
https://doi.org/10.1109/cleo.2008.4551559
Publikováno v:
Physical Review B. 73
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c582e974b8f5df79580cb8171c9ab2
https://doi.org/10.1103/physrevb.73.155324
https://doi.org/10.1103/physrevb.73.155324
Publikováno v:
Selected Topics in Electronics and Systems.
We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD) Al2O3 film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/GaN HEMT of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c7488176a7096bb262115ece1d0884a
https://doi.org/10.1142/9789812702036_0027
https://doi.org/10.1142/9789812702036_0027
Publikováno v:
Simulation of Semiconductor Devices and Processes ISBN: 9783709173633
A capacitance model for microwave Double Heterojunction Bipolar Transistors (DHBTs) is presented to account for their special behavior in small-signal S-parameters. A physical picture of barrier effects in DHBTs is described.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b52d064ee6df9a5da295a13bbc152fd
https://doi.org/10.1007/978-3-7091-6619-2_72
https://doi.org/10.1007/978-3-7091-6619-2_72
Publikováno v:
Simulation of Semiconductor Devices and Processes ISBN: 9783709173633
For the first time, numerical simulation of GaAs metal-semiconductor field-effect transistors subjected to hot-electron-induced degradation was performed. Experimentally observed open-channel current reduction and gate-drain field relaxation were ver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70602c9ad363a2e756071669c011f1f
https://doi.org/10.1007/978-3-7091-6619-2_71
https://doi.org/10.1007/978-3-7091-6619-2_71