Výsledky vyhledávání - "J. C. M. Henning"

Many-particle effects in Be-δ-dopedGaAs/AlxGa1−xAsquantum wells

Autor: Pmm Thomassen, PM Paul Koenraad, Martijn Kemerink, JH Joachim Wolter, J. C. M. Henning, PA Peter Bobbert

Publikováno v: Physical Review B. 58:1424-1435

We have performed photoluminescence (PL) and photoluminescence excitation measurements on two series of center-\ensuremath{\delta}-doped $p$-type ${\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a1be2d3f0d13ea4d277f48ad3b74728
https://doi.org/10.1103/physrevb.58.1424

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Electron-phonon coupling in a δ-dopedn-i-pstructure in GaAs

Autor: JH Joachim Wolter, J. C. M. Henning, W.C. van der Vleuten, F. P. J. de Groote

Publikováno v: Physical Review B. 53:15802-15809

The donor-acceptor transition in the photoluminescence (PL) spectra of \ensuremath{\delta}-doped n-i-p structures in GaAs is studied in detail. Unpolarized PL spectra exhibit an unexpected large linewidth; p-polarized PL spectra reveal that this line

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cc3003ef3a376a9e9ff80347850ece6
https://doi.org/10.1103/physrevb.53.15802

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Luminescence of a Delta Doping Related Exciton in GaAs:Si

Autor: A M Frens, JH Joachim Wolter, Maarten Leijs, W.C. van der Vleuten, Yarr Kessener, J. C. M. Henning, PM Paul Koenraad

Publikováno v: Materials Science Forum, 143-147, 653-656. Trans Tech Publications

Photoluminescence spectra of Si d-doped GaAs show a sharp future at 1.4977 eV with phonon replicas (5.2 meV apart) due to an exciton bound to an isoelectronic centre, introduced by the delta doping procedure. A reasonable model for the isoelectronic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa1d18551723a88590f4d72ef748e988
https://doi.org/10.4028/www.scientific.net/msf.143-147.653

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Photoluminescence study of Si delta-doped GaAs

Autor: W. C. van der Vleuten, J. C. M. Henning, Y A R R Kessener, PM Paul Koenraad, M.R. Leys, JH Joachim Wolter, A M Frens

Publikováno v: Semiconductor Science and Technology. 6:1079-1087

A photoluminescence (PL) study is made of (001) oriented GaAs samples containing a single delta doping layer of silicon. Depending on the growth temperature several novel narrow spectral features are observed that are related to the delta doping proc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8fb6e15d68e2d338e2576e07c93461c6
https://doi.org/10.1088/0268-1242/6/11/008

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Photoluminescence and Excitation Study of Delta Doped GaAs

Autor: Y.A.R.R. Kessner, JH Joachim Wolter, PM Paul Koenraad, M.R. Leys, W.C. van der Vleuten, A.P.J. Voncken, J. C. M. Henning

Publikováno v: Materials Science Forum. :73-78

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f57a5b99dfa35b4bb79b7d3ddba6707
https://doi.org/10.4028/www.scientific.net/msf.65-66.73

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The Double-Faced DX Center in AlxGa1-xAs

Autor: J.P.M. Ansems, J C M Henning, E.A. Montie

Publikováno v: Materials Science Forum. :1085-1090

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1747661ecaa550d65970cf5694e5232d
https://doi.org/10.4028/www.scientific.net/msf.38-41.1085

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Optically detected magnetic resonance of Si donors inAlxGa1−xAs

Autor: E. C. Cosman, J. C. M. Henning, E. A. Montie

Publikováno v: Physical Review B. 42:11808-11817

La plupart des echantillons presentent deux signaux de resonance superapposes: un groupe hyperfin a quatre raies et une raie unique. On etudie plus particulierement le spectre a raie unique qu'on attribue au systeme donneur de Si. Les resultats sont

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::065d3b7f4a567154c80dc3ced42bc006
https://doi.org/10.1103/physrevb.42.11808

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Diffusion of Si in δ-Doped GaAs Studied by Magneto Transport

Autor: J. A. A. P. Perenboom, PM Paul Koenraad, JH Joachim Wolter, I. Barsony, J. C. M. Henning

Publikováno v: Semiconductor Interfaces at the Sub-Nanometer Scale ISBN: 9789401049009

We have performed time dependent and temperature dependent annealing experiments on Si-δ-doped GaAs grown at 480 °C. We observed a doping concentration dependent diffusion rate. The increment of the diffusion rate with the doping concentration is t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7090df818f9a32009ad6bb55565e9374
https://doi.org/10.1007/978-94-011-2034-0_4

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Optically detected magnetic resonance from the DX centre in silicon-doped AlxGa1-xAs

Autor: J C M Henning, E A Montie

Publikováno v: Journal of Physics C: Solid State Physics. 21:L311-L316

A new infrared luminescence feature in AlxGa1-xAs is found to correlate with Si doping. Magnetic resonance signals are detected on this luminescence and on the visible L-bound effective-mass donor-to-acceptor recombination luminescence. An observed r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f489e28adecae76d095a379c2406aa05
https://doi.org/10.1088/0022-3719/21/10/003

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Spectroscopic determination of L6conduction band minima in AlxGa1-xAs

Autor: P J Roksnoer, J P M Ansems, J C M Henning

Publikováno v: Journal of Physics C: Solid State Physics. 19:L335-L338

The energies of the L6 conduction band minima in AlxGa1-xAs have been determined by means of photoluminescence excitation spectroscopy at T=4K. The results are compared with empirical relationships, derived from transport measurements.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::07e7b46ad7fd9c1d718c9097bd550fc5
https://doi.org/10.1088/0022-3719/19/15/005

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