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pro vyhledávání: '"J. C. Flassayer"'
Publikováno v:
Journal of Materials Research. 5:1224-1232
Post-deposition rapid vacuum annealing of tantalum nitride (Ta2N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about −140 ppm/°C. A subsequent aging study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0157b4f143fc0644be3e20bd2e3aece1
https://doi.org/10.1557/jmr.1990.1224
https://doi.org/10.1557/jmr.1990.1224
