Zobrazeno 1 - 10
of 11
pro vyhledávání: '"J. C. Eckert"'
Publikováno v:
Physical Review Materials
Publikováno v:
Journal of Applied Physics. 93:6608-6610
We report striking behavior in thin IrMn exchange-biased heterostructures. We have studied exchange-biased multilayers with IrMn thicknesses from 2 to 80 A with 50-A Ti over- and underlayers. The resistance of spin valves with Si/50-A Ti/40-A NiFe/8-
Autor:
L, Wang, K, Umemoto, R M, Wentzcovitch, T Y, Chen, C L, Chien, J G, Checkelsky, J C, Eckert, E D, Dahlberg, C, Leighton
Publikováno v:
Physical review letters. 94(5)
In the emerging field of spin-electronics ideal ferromagnetic electron sources would not only possess a high degree of spin polarization, but would also offer control over the magnitude of this polarization. We demonstrate here that a simple scheme c
Publikováno v:
Scopus-Elsevier
Summary form only given. The properties of IrMn spin valves with IrMn layer thicknesses ranging from 4 /spl Aring/ to 28 /spl Aring/ are explored at temperatures to 5 K. In particular, the temperature dependence of the resistance is investigated. The
Autor:
S. Moyerman, Matthew J. Carey, Katherine L. Perdue, K. F. Shakespear, J. G. Checkelsky, S. S. Harberger, Adele C. Tamboli, J. C. Eckert, P.D. Sparks
Publikováno v:
Journal of Applied Physics. 97:10C513
The spin dependent mean free path in Co90Fe10 is determined as a function of temperature down to 5K using two different spin valve structures. At 5K the spin dependent mean free path for one structure was measured to be 9.4±1.4nm, decreasing by a fa
Publikováno v:
Journal of Applied Physics. 91:8569
The properties of IrMn spin valves with tIrMn⩽26 A are explored at temperatures down to 5 K. The structure is: Ti(50 A)/NiFe(40 A)/Co(8 A)/Cu(30 A)/Co(30 A)/IrMn(t A)/Ti(50 A) on a Si substrate. The low temperature giant magnetoresistance(GMR) is n
Publikováno v:
Physical Review B. 28:910-914
Publikováno v:
Physical Review B. 23:1517-1526
Publikováno v:
Physical Review Letters. 42:811-814
Publikováno v:
Molecular Crystals and Liquid Crystals. 81:41-47
The microwave conductivity of TaS3 and NbS3 have been measured. In both compounds the conductivity at 9.8 GHz shows very large enhancement over the dc value. A brief discussion based on contributions from charge-density-wave oscillation is given for