Výsledky vyhledávání

In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system

Autor: J.-C Dupuy, Y. Zheng, V LeThanh, C. Calmes, V Fortuna, Daniel Bouchier

Publikováno v: Materials Science and Engineering: B. 89:246-251

In situ reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM) and high resolution X-ray diffraction (XRD) have been combined to investigate the kinetics of carbon incorporation during the growth of SiGeC alloys o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9729511fe69f1b14b462f74f0e89f191
https://doi.org/10.1016/s0921-5107(01)00795-4

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Carbon self-organization in the ternary Si1−x−yGexCy alloy

Autor: C. Guedj, G. Calvarin, B. Piriou, B. Gautier, A. Hairie, Daniel Bouchier, X. Portier, J. C. Dupuy

Publikováno v: Journal of Applied Physics. 83:5251-5257

This article demonstrates for the first time the possible self-ordering of carbon in Si1−x−yGexCy thin films pseudomorphically grown on silicon. Germanium and carbon atomic distributions have been studied for a C-rich Si0.9−yGe0.1Cy heterostruc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::efbe3fad92c0c3936f33a7b4cdcf897b
https://doi.org/10.1063/1.367347

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Study of the thermal stability at the interface

Autor: F. Pires, F. Braud, A. Labiadh, C. Dubois, J. C. Dupuy, Gérard Passemard, J. Torres, J. Palleau, Brice Gautier

Publikováno v: Microelectronic Engineering. 33:369-375

For future interconnect technologies several material changes are required. Low-k dielectrics in combination with copper should offer the most efficient structures for interconnection. In this paper we have evaluated for the first time the compatibil

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c44590787b5e2ed548b37fdbd6f97553
https://doi.org/10.1016/s0167-9317(96)00067-6

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Electron mobility enhancement in a strained Si channel

Autor: P. Warren, L. Garchery, J.-C. Dupuy, Isabelle Sagnes, P. A. Badoz

Publikováno v: Journal of Crystal Growth. 157:367-372

High-quality n-type modulation doped Si SiGe heterostructures are fabricated by rapid thermal chemical vapor deposition and electrically characterized by Hall effect measurements from temperature (RT) to 2 K. A new technique for the direct measuremen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d35b85e98accf04cf1a2058a0029e16
https://doi.org/10.1016/0022-0248(95)00356-8

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High-resolution SIMS profiling of nitrogen in ultra-thin SiO2 films nitrided by RTP in NH3 and N2O

Autor: M. Dutoit, N. Xanthopoulos, Didier Bouvet, C. Dubois, J. Mi, J. C. Dupuy, H. J. Mathieu, P. Letourneau

Publikováno v: Microelectronic Engineering. 22:81-84

Nitrogen profiles in ultra-thin SiO 2 films nitrided in NH 3 or N 2 O by rapid thermal processing (RTP) were measured by high-resolution SIMS. By tracking the 14 N + species, rather than the 42 SiN + one, as usually done, much improved results are ob

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f1332f2a566d27cdf8a7c3a813d834cc
https://doi.org/10.1016/0167-9317(93)90135-r

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Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Autor: J. C. Dupuy, G. Prudon, Thierry Klein, Raoul Piquerel, Luc Ortega, Etienne Bustarret, C. Marcenat, C. Dubois, Dominique Débarre, Brice Gautier, Thierry Kociniewski, Jozef Kacmarcik, J. Boulmer, Philipp Achatz

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 81 (2), pp.020501. ⟨10.1103/PhysRevB.81.020501⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (2), pp.020501. ⟨10.1103/PhysRevB.81.020501⟩

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1af146efd2bdad424ce49e101ae08e84
http://arxiv.org/abs/0910.5378

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CT of malignant anal canal tumors

Autor: Y Menu, D Martin, F Reboul, A Scherrer, J C Dupuy

Publikováno v: RadioGraphics. 10:433-453

Radiation therapy of malignant neoplasms of the anal canal has promising results in the majority of patients if the disease is limited at initial diagnosis. Computed tomography (CT), especially when performed with contrast material injected intraveno

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1746353b486021eb45375587f6b7f484
https://doi.org/10.1148/radiographics.10.3.2188307

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Study of Ge bonding and distribution in plasma oxides of Si1−xGex alloys

Autor: Y. Campidelli, R. A. B. Devine, C. Hernandez, M. Seck, J.-C. Dupuy

Publikováno v: Applied Physics Letters. 72:2748-2750

Secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) absorption have been studied in thin oxides of Si1−xGex grown by plasma oxidation. SIMS analysis reveals that Ge can migrate to the oxide film surface leaving the oxide in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9261a7a22fa905ca0c05bd3768fdb821
https://doi.org/10.1063/1.121078

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Proposal of a New Variant Resolution Function Adapted to the Low Energies in SIMS

Autor: H. Farah, B. Faycal, J.-C. Dupuy, B. Meriem

Publikováno v: 2006 2nd International Conference on Information & Communication Technologies.

In the analysis by secondary ions mass spectroscopy (SIMS), for low energy, it is necessary to take into account the appearance of the roughness induced being analysed. This phenomenon results in the variation of the depth resolution function (DRF).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f25c8962edaee76462dd4206ecb69e4
https://doi.org/10.1109/ictta.2006.1684361

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High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane

Autor: Patricia Warren, P. Letourneau, M. Judelewicz, M. Dutoit, J. C. Dupuy, M. Gailhanou, C. Dubois, J. Mi

Publikováno v: Applied Physics Letters. 67:259-261

We have produced epitaxial Si1−x−yGexCy/Si heterostructures by rapid thermal chemical vapor deposition using methylsilane SiCH6). These layers were grown in the SiH4/GeH4/SiCH6/H2 system between 550 and 600 °C at 1.5 Torr. Suitable process condi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25114f93e19f2c95c8e83acc31cb0f35
https://doi.org/10.1063/1.114686

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