Zobrazeno 1 - 5
of 5
pro vyhledávání: '"J. C. Boisvert"'
Autor:
Daniel C. Law, D. M. Bhusari, S. Mesropian, S. B. Singer, P. T. Chiu, W. D. Hong, R. L. Woo, X. Q. Liu, C. M. Fetzer, A. T. Palmer, E. M. Rehder, R. R. King, J. C. Boisvert, N. H. Karam
Publikováno v:
ECS Meeting Abstracts. :2961-2961
not Available.
Origin of dark counts in In0.53Ga0.47As∕In0.52Al0.48As avalanche photodiodes operated in Geiger mode
Autor:
G. Karve, S. Wang, F. Ma, X. Li, J. C. Campbell, R. G. Ispasoiu, D. S. Bethune, W. P. Risk, G. S. Kinsey, J. C. Boisvert, T. D. Isshiki, R. Sudharsanan
Publikováno v:
Applied Physics Letters. 86:063505
A dark count rate in InP-based single photon counting avalanche photodiodes is a limiting factor to their efficacy. The temperature dependence of the dark count rate was studied to understand its origin in In0.53Ga0.47As∕In0.52Al0.48As separate-abs
Publikováno v:
Journal of Physics C: Solid State Physics. 15:5037-5047
For pt.I see ibid., vol.15, p.5033 (1982). The cluster approximation in the unrestricted Hartree-Fock limit is used in a computation of the Na LII,III X-ray edge in NaF. In these computations the appropriate boundary potential discussed by Kunz and K
Publikováno v:
Physical Review B. 30:2158-2162
Publikováno v:
Journal of Physics C: Solid State Physics. 15:5033-5036
The connection between fundamental core excitations and X-ray edges in non-metallic solids is reviewed. By means of a cycle of the Born-Haber type which is described herein, a connection is established for an alkali halide crystal between the energy