Zobrazeno 1 - 10
of 11
pro vyhledávání: '"J. C. Beggy"'
Publikováno v:
Journal of Electronic Materials. 21:119-124
Data presented here demonstrate that strained-layer (111)B Al0.15Ga0.85As-In0.04Ga0.96As quantum wells exhibit unique optical properties when compared to otherwise identical (100) oriented strained layers. Photoluminescence measurements identify a st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dfd5f41c19270738d823279d2aa57df
https://doi.org/10.1007/bf02670931
https://doi.org/10.1007/bf02670931
Autor:
R. C. Barker, Louis J. Guido, T. J. Cunningham, R. N. Sacks, Theodore S. Moise, S. Seshadri, J. C. Beggy
Publikováno v:
Journal of Electronic Materials. 21:33-38
AlGaAs-GaAs quantum well heterostructures have been annealed in an atmospheric pressure MOCVD reactor under an AsH3/H2 ambient. Photoluminescence spectra show a uniform and reproducible increase in the effective quantum well band-gap. Energy shift da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac1074cf35fd1bd713c8b8d951a832b4
https://doi.org/10.1007/bf02670917
https://doi.org/10.1007/bf02670917
Publikováno v:
Applied Physics Letters. 66:127-129
An AlxGa1−xAs p‐n junction light emitting diode, with a thin In2O3 current spreading layer, on the top side, and an indirect band‐gap AlAs‐Al0.6Ga0.4As distributed Bragg reflector, on the bottom side, has been fabricated and characterized und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd9a7c900b955150a65229eeb01e7012
https://doi.org/10.1063/1.113538
https://doi.org/10.1063/1.113538
Publikováno v:
Journal of Applied Physics. 71:1070-1072
The current–voltage characteristics of annealed In2O3–GaAs devices have been investigated for the purpose of fabricating transparent ohmic contacts to GaAs. A detailed study of the reverse current for as‐deposited structures with degenerately d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba4cd26542e2f92c4b2127749940834e
https://doi.org/10.1063/1.350403
https://doi.org/10.1063/1.350403
Autor:
Timothy D. Harris, Vincent M. Donnelly, F. A. Baiocchi, V. R. McCrary, Charles W. Tu, J. C. Beggy, M. G. Lamont
Publikováno v:
Applied Physics Letters. 52:966-968
We report results on the effect of a 193 nm ArF excimer laser on molecular beam epitaxial growth of (Al)GaAs on GaAs substrates and GaAs on lattice‐matched (Ca,Sr)F2/GaAs heterostructures. For growth on GaAs substrates, regions exposed to the laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4979a2a022e387e482378ed70547f65
https://doi.org/10.1063/1.99243
https://doi.org/10.1063/1.99243
Autor:
F. A. Baiocchi, M. G. Lamont, Vincent M. Donnelly, J. C. Beggy, V. R. McCrary, Timothy D. Harris, Reginald C. Farrow, Charles W. Tu
Publikováno v:
Applied Physics Letters. 52:1065-1067
We report preliminary studies of the growth of homoepitaxial GaAs by laser‐assisted metalorganic molecular beam epitaxy, using triethylgallium (TEGa) and As4 sources and a 193 nm ArF excimer laser. Laser irradiation results in a high, selective‐a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd91c4310f907eacf7f37a2607f049f2
https://doi.org/10.1063/1.99212
https://doi.org/10.1063/1.99212
Autor:
J. C. Beggy, Vincent M. Donnelly, M. G. Lamont, Timothy D. Harris, Reginald C. Farrow, V. R. McCrary, F. A. Baiocchi, Charles W. Tu
Publikováno v:
MRS Proceedings. 101
We report the growth of GaAs by laser-assisted molecular beam epitaxy, using As4 and either elemental Ga or triethylgallium (TEG) sources, and a 193 nm ArF excimer laser. Laser irradiation of (Al)GaAs has no effect on the growth rate or Ga-to-Al inco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc034c37961802688b50cdb36afaadd
https://doi.org/10.1557/proc-101-291
https://doi.org/10.1557/proc-101-291
Autor:
S. J. Hsieh, F. A. Baiocchi, Rose Kopf, S. M. Abys, Charles W. Tu, R. Caruso, A. S. Jordan, J. C. Beggy, Stephen J. Pearton
Publikováno v:
MRS Proceedings. 91
Epitaxial, lattice-matched GaAs/Ca0.45Sr0.55/F2 heterostructures were grown on Ge(100) substrates by molecular beam epitaxy. The films were analyzed by Rutherford backscattering and secondary ion mass spectroscopy to determine crystallinity and Ge ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be853b4436d96a395b86c2ccc740e942
https://doi.org/10.1557/proc-91-359
https://doi.org/10.1557/proc-91-359
Publikováno v:
Journal of Crystal Growth. 95:140-141
Using an ArF excimer laser (193 nm, 15 ns pulse, 20 Hz, 50–200 mj cm -2 pulse -1 ), we demonstrated laser-inhibited molecular-beam epitaxy (MBE) of GaAs on the surface of (Ca,Sr)F 2 lattice-matched to a GaAs substrate. We also demonstrated laser-en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9b693806d0ae49dcaf043f082db3f43
https://doi.org/10.1016/0022-0248(89)90367-9
https://doi.org/10.1016/0022-0248(89)90367-9
Autor:
J. C. Beggy, F. A. Baiocchi, Stephen J. Pearton, S. J. Hsieh, R. Caruso, S. M. Abys, Charles W. Tu, A. S. Jordan, R. F. Kopf
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:720
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5b9d7d70d0dee737f0afe49a81b3164
https://doi.org/10.1116/1.584355
https://doi.org/10.1116/1.584355