Zobrazeno 1 - 10 of 39 pro vyhledávání: '"J. C. Bean"'
5
Tribochemical Reactions of Silicon: An In Situ Infrared Spectroscopy Characterization
Autor: T. E. Fischer, B. M. Gallois, V. A. Muratov, J. C. Bean, J. E. Olsen
Publikováno v: Journal of The Electrochemical Society. 145:2465-2470
This paper describes the tribochemical reactions of silicon against a polymer pad as studied by attenuated total internal reflection Fourier transform infrared spectroscopy. The evolution of the silicon surface and chemical species formed on the surf
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::073f3df61cdd443b3b48a545cec3a3fc
https://doi.org/10.1149/1.1838661
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6
Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism
Autor: Wei Cai, Leon McCaughan, Max G. Lagally, Thomas F. Kuech, E. Rudkevich, J. S. Sullivan, Donald E. Savage, S. Nayak, J. C. Bean
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:2153-2157
We show that it is possible to extend the lower limit of the spectral range of Fourier transform infrared-attenuated total reflection (FTIR-ATR) spectroscopy on Si surfaces from 1500 to ∼850 cm−1 using a Ge ATR prism coated with a thin epitaxial
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::47346e380511b14000adcaf4f10ec362
https://doi.org/10.1116/1.580622
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7
Infrared absorption of Ge epitaxial films on a GaAs substrate
Autor: J. Dunkel, C. W. Roberts, W. Y. Han, J. C. Bean, L. Peticolas, Madan Dubey, L. C. West, Kenneth A. Jones
Publikováno v: Journal of Applied Physics. 79:7157-7160
Germanium films were deposited on GaAs (100) substrates with or without an epiready surface oxide at temperatures between room temperature (RT) and 500 °C using an ultrahigh‐vacuum e‐beam deposition system. The film at 100 °C on a substrate wit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a9dcb5ad25b81233f91ad315622d869b
https://doi.org/10.1063/1.361486
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9
Localised strain characterisation in semiconductor structures using electron diffraction contrast imaging
Autor: Koenraad G. F. Janssens, Herman Maes, J. C. Bean, O. Van der Biest, Robert Hull, J. Vanheliemont
Publikováno v: Materials Science and Technology. 11:66-71
Understanding and controlling localised strain in semiconductor devices is one of the critical challenges confronting the designer of new technologies. Due to continuous scaling down in very large and ultralarge scale integration there is a growing r
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::23e0d02ce63f473f270d1011b07a8c92
https://doi.org/10.1179/mst.1995.11.1.66
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10
New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in-situ transmission electron microscope observations of misfit dislocations in thin strained epitaxial layers
Autor: J. C. Bean, Robert Hull
Publikováno v: Physica Status Solidi (a). 138:533-546
By in-situ annealing of metastably strained (Si)/GexSi1−x/Si heterostructures in a transmission electron microscope, it is possible to directly observe and measure misfit dislocation propagation velocities. These measurements correspond to differen
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc99481ccc6273ec7ca361e9def76f2e
https://doi.org/10.1002/pssa.2211380222
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