Zobrazeno 1 - 10
of 105
pro vyhledávání: '"J. C. Barbour"'
Autor:
D. Kashiura, F. Hernandez, P. V. P. Lima, L. Ono, J. C. Barbour, R. Ferreira, G. Julian, L. van der Werf
Publikováno v:
Value in Health. 24:S64
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45e9f97a78ef3d051e33255c84c5437e
https://doi.org/10.1016/j.jval.2021.04.328
https://doi.org/10.1016/j.jval.2021.04.328
Publikováno v:
Journal of The Electrochemical Society. 159:C259-C264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::781f1ba9f65c7ee8339c2c37fa0c4f99
https://doi.org/10.1149/2.008206jes
https://doi.org/10.1149/2.008206jes
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 206:1062-1065
A mechanistic-based understanding of corrosion is needed in order to predict aging characteristics and reliability of either electronic or structural components. Although it is well known that the presence of a halide such as Cl− is necessary for p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a76f0817002c60ba5dc8d25e01d1294
https://doi.org/10.1016/s0168-583x(03)00911-x
https://doi.org/10.1016/s0168-583x(03)00911-x
Autor:
Donald R. Baer, F. D. Wall, B. C. Bunker, G. C. Nelson, John P. Sullivan, Charles F. Windisch, Kevin R. Zavadil, J. C. Barbour, M. H. Engelhardt
Publikováno v:
The Journal of Physical Chemistry B. 106:4705-4713
Secondary ion mass spectrometry (SIMS) has been used in conjunction with isotopic labeling to determine the extent and rate of passive film hydration on aluminum. The rates at which oxygen- and hydrogen-containing species migrate through the film hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::651a5261423898d6e01348772602bc9e
https://doi.org/10.1021/jp013246e
https://doi.org/10.1021/jp013246e
Publikováno v:
Journal of Applied Physics. 90:108-117
We have used ion channeling to examine the lattice configuration of hydrogen in Mg doped wurtzite GaN grown by metal organic chemical vapor deposition. Hydrogen is introduced by exposure to hydrogen gas or electron cyclotron resonance plasmas and by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d899aa3ba913f919a66a72db801079c
https://doi.org/10.1063/1.1377609
https://doi.org/10.1063/1.1377609
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :382-387
Ion-beam irradiation and ion implantation were used to evaluate the influence of point defects and alloying elements on the sulfidation rate of copper films in atmospheric environments containing H 2 S. Low-energy ions from an oxygen plasma were used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b6a5fa1e951fd88892f758b3aa3efeb
https://doi.org/10.1016/s0168-583x(00)00682-0
https://doi.org/10.1016/s0168-583x(00)00682-0
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :140-147
This paper examines the correlation between mechanical properties and the density, phase and hydrogen content of deposited alumina layers, and compares them to those of sapphire and amorphous alumina synthesized through ion-beam irradiation of sapphi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d8bdff973959777732c727d5c1f6ce7
https://doi.org/10.1016/s0168-583x(99)00648-5
https://doi.org/10.1016/s0168-583x(99)00648-5
Autor:
M. P. Siegal, D. R. Tallant, L. J. Martinez-Miranda, J. C. Barbour, R. L. Simpson, D. L. Overmyer
Publikováno v:
Physical Review B. 61:10451-10462
Nanostructural characterization of amorphous diamondlike carbon (a-C) films grown on silicon using pulsed-laser deposition (PLD) is correlated to both growth energetic and film thickness. Raman spectroscopy and x-ray reflectivity probe both the topol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e496361bb9654bae43d25d473bf96d83
https://doi.org/10.1103/physrevb.61.10451
https://doi.org/10.1103/physrevb.61.10451
Autor:
David M. Follstaedt, John L. Reno, L. R. Dawson, Samuel M. Myers, J. C. Barbour, S. R. Lee, G. A. Petersen
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 160:476-498
The ion implantation of He is examined as a means to form thermally stable cavities in GaAs. Room-temperature implantation of 2–10 × 10 16 He/cm 2 at 40 or 50 keV forms bubbles, but subsequent annealing at 250°C or above leads to exfoliation of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f17c9140980526ed2236a5a8e2cd5a8c
https://doi.org/10.1016/s0168-583x(99)00618-7
https://doi.org/10.1016/s0168-583x(99)00618-7
Publikováno v:
Journal of Applied Physics. 86:396-401
The role of hydrogen in enhancing the photoluminescence (PL) yield observed from Si nanocrystals embedded in SiO{sub 2} has been studied. SiO{sub 2} thermal oxides and bulk fused silica samples have been implanted with Si and subsequently annealed in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd4acc99facb64ee807d2c4d9205556b
https://doi.org/10.1063/1.370699
https://doi.org/10.1063/1.370699