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Microstructure and Ferroelectric Properties of (Bi,Nd)4Ti3O12Thin Films Fabricated by a Sol-Gel Process

Autor: S. S. Kim, E. K. Choi, M. H. Park, H. J. Kim, H. S. Lee, W. -J. Kim, J. C. Bae, T. K. Song, I. -S. Kim, J. -S. Song, J. Y. Lee

Publikováno v: Ferroelectrics. 328:139-143

We report on the ferroelectric properties of Bi 3.54 Nd 0.46 Ti 3 O 12 (BNT) thin films fabricated on Pt(111)/Ti/SiO 2 /Si substrates by a sol-gel process. The measured XRD patterns and SEM and TEM micrographs revealed that the films showed only a Bi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9c58ebb76e616721b971c78a0423f53
https://doi.org/10.1080/00150190500311664

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Ferroelectric Properties of (Bi, Sm)4Ti3O12 (BST) Thin Films Fabricated by a Metalorganic Solution Deposition Method

Autor: S. S. Kim, E. K. Choi, H. J. Kim, M. H. Park, H. S. Lee, W. J. Kim, J. C. Bae, T. K. Song, J. Y. Lee

Publikováno v: Journal of Electroceramics. 13:83-88

Ferroelectric properties of samarium substituted Bi4Ti3O12 films, Bi3.15Sm0.85Ti3O12 (BST), were evaluated for use as lead-free thin film ferroelectrics for FeRAM applications. The BST films were fabricated on the Pt/Ti/SiO2/Si(100) substrates by a m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb7600a6b3a8483445ae07c15aa6f090
https://doi.org/10.1007/s10832-004-5080-4

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Co-transplantation of bone marrow-derived endothelial progenitor cells improves revascularization and organization in islet grafts

Autor: Chung Gyu Park, S.-H. Suh, Bae Jun Oh, Jae Hyeon Kim, Min-Suk Lee, S. H. Oh, S.-M. Jin, Kang-Seok Kim, M. K. Lee, J. C. Bae

Publikováno v: American journal of transplantation : official journal of the American Society of Transplantation and the American Society of Transplant Surgeons. 13(6)

Bone marrow-derived early endothelial progenitor cells (BM-EPCs) are a clinical tool for enhancing revascularization. However, the therapeutic efficacy of co-transplantation of BM-EPC with islets has not been investigated. In this study, marginal mas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60f14f2a20b44bc938e17828fd6d1181
https://pubmed.ncbi.nlm.nih.gov/23601171

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Akademický článek

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A novel atomic layer doping technology for ultra-shallow junction in sub-0.1 μm MOSFETs

Autor: K.S. Kim, K.Y. Kim, Kitae Park, H. Kurino, J. C. Bae, M. Koyanagi, Yun Heub Song, K. Kato, E. Arakawa

Publikováno v: International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

This paper presents a novel technology to form an ultra-shallow source and drain extension (SDE) junctions for the future MOSFETs. In this technology, a dopant in an adsorbed layer on the Si surface diffuses into the substrate by the rapid thermal an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::177a0b9d348f9b7eedb0935671d8c16d
https://doi.org/10.1109/iedm.1999.824203

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Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Autor: M. Oonishi, J. C. Bae, Yun Heub Song, Mitsumasa Koyanagi, Hiroyuki Kurino, T. Honda

Publikováno v: 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).

This paper proposes a novel source and drain junction technology for realizing sub 0.1 /spl mu/m NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using arsenic (As) diffusion from as adsorbed atomic layer on silicon surfac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de77138abd0a42d17f2745d438534b18
https://doi.org/10.1109/drc.1999.806331

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A study on the dynamic scheme of optical gyrocompass

Autor: J. C. Bae, S. J. Lee, T. H. Hong

Publikováno v: 17th Congress of the International Commission for Optics: Optics for Science and New Technology.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::644054b23cb1ccc5838f30f115b5a32e
https://doi.org/10.1117/12.2316220

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