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pro vyhledávání: '"J. Brian Mullin"'
Autor:
J. Brian Mullin
The Czochralski-related growth of semiconductor compounds is discussed with reference to the more developed III-Vs and II-VIs; this includes the main antimonides, arsenides, and phosphides, as well as CdTe, ZnTe, and ZnTe. The emphasis is on the tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfb3994562fa07c133044642942a94f4
https://doi.org/10.1016/b978-0-444-63303-3.00003-1
https://doi.org/10.1016/b978-0-444-63303-3.00003-1
Autor:
Matthias Bickermann, Michal Bockowski, Martin Bruder, Kullaiah Byrappa, Shayan M. Byrappa, Peter Capper, Chuantian Chen, Hanna A. Dąbkowska, Antoni B. Dąbkowski, Jeffrey J. Derby, Thierry Duffar, Dirk Ehrentraut, Stefan Eichler, Jochen Friedrich, Tsuguo Fukuda, Zbigniew Galazka, Bing Gao, Juan Manuel García-Ruiz, Gunter Gerbeth, Martin E. Glicksman, Regina Hermann, Chuck Hsu, Mamoru Imade, Hiroyuki Ishibashi, Mitsuru Ishii, Teruo Izumi, Manfred Jurisch, Koichi Kakimoto, Fumino Kawamura, Takahiro Kawamura, Alexander F. Khokhryakov, Helmut Klapper, Krzysztof Kubiak, Igor N. Kupriyanov, Chung-wen Lan, Anke Lüdge, Mihoko Maruyama, Ma Eugenia Mendoza, Noriyuki Miyazaki, Hans-Joachim Möller, Abel Moreno, Yusuke Mori, Andris Muiznieks, Georg Müller, J. Brian Mullin, Kazuo Nakajima, Namratha Keerthiraj, Teruhiko Nawata, Michael Neubert, Arkadiusz Onyszko, Aleks G. Ostrogorsky, Fermín Otálora, Yuri N. Palyanov, Tania Paskova, Janis Priede, Igor Pritula, Victor G. Ralchenko, Helge Riemann, Peter Rudolph, Keshra Sangwal, Nobuhiko Sarukura, Christiane Schmidt, Yuh Shiohara, Jan Sieniawski, Dariusz Szeliga, Joop H. ter Horst, Robert Triboulet, Takao Tsukada, Joachim Ulrich, Janis Virbulis, Daniel Vizman, Wilfried von Ammon, Jiyang Wang, Yan Wang, Nico Werner, Jan Winkler, Hisanori Yamane, Haohai Yu, Andrew Yeckel, Masashi Yoshimura, Guochun Zhang, Evgeny Zharikov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2335d1ac4398305c9b546436ceb24c51
https://doi.org/10.1016/b978-0-444-63303-3.01002-6
https://doi.org/10.1016/b978-0-444-63303-3.01002-6
Autor:
J. Brian Mullin
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 38:1-6
Autor:
J. Brian Mullin
Publikováno v:
Materials Science and Technology
The sections in this article are Introduction Historical Background Purification General Purification Procedures Zone Refinig and Related Techniques Problems with Specific Compounds InSb and GaSb InAs and GaAs InP and GaP II–VI Compounds Technical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa7a0dc101bcaac55ab400ad44d0d045
https://doi.org/10.1002/9783527603978.mst0256
https://doi.org/10.1002/9783527603978.mst0256
Autor:
David J. Cole-Hamilton, Deodatta Vinayak Shenai-Khatkhate, A.Ewan D. McQueen, J. Brian Mullin, John C. Walton, Peter N. Culshaw
Publikováno v:
Journal of Crystal Growth. 107:325-330
Unsymmetrical dialkyltellurides of type RTeR′ suitable for use as precursors in the metalorganic vapour phase epitaxy (MOVPE) of cadmium mercury telluride (CMT) can be prepared by an alkyl exchange process. For certain organotellurium compounds, re
Autor:
David J. Cole-Hamilton, J. Brian Mullin, Paul B. Webb, Graham W. Blackmore, Deodatta Vinayak Shenai-Khatkhate
Publikováno v:
Journal of Crystal Growth. 93:744-749
The preparation of a wide range of dialkyltellurium compounds of potential use as the precursors for the epitaxial growth of materials in the CdHgTe system is described. In general these are synthesised by a previously reported route. Methods f
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