Zobrazeno 1 - 10
of 95
pro vyhledávání: '"J. Bougnot"'
Publikováno v:
Solid State Phenomena. :503-508
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c1f62078bf47f696d48a6d69f30fae9
https://doi.org/10.4028/www.scientific.net/ssp.37-38.503
https://doi.org/10.4028/www.scientific.net/ssp.37-38.503
Publikováno v:
ChemInform. 24
The growth of n-type Ga 1-x In x Sb (x≥35%) by metal organic vapor phase epitaxy (MOVPE) using a dimethyltellurium dopant source is investigated both on (001) GaSb misoriented 2 o off touwards and (100) GaAs substrates. The results of growth rate,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15fb8cff8c0230198299da3346e8b56e
https://doi.org/10.1002/chin.199349001
https://doi.org/10.1002/chin.199349001
Publikováno v:
Journal of Crystal Growth. 124:620-627
In this paper, we present the different ways by which we tried to grow CuInSe2 (CIS) films in order to work at relatively low source temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdc823df172148a73bd790db83df34b8
https://doi.org/10.1016/0022-0248(92)90527-p
https://doi.org/10.1016/0022-0248(92)90527-p
Autor:
Frédérique Pascal-Delannoy, M. Bow, G. G. Allogho, Alain Giani, J. Bougnot, J. Kaoukab, G. Bougnot
Publikováno v:
Materials Science and Engineering: B
Materials Science and Engineering: B, Elsevier, 1991, 9 (1-3), pp.121-124. ⟨10.1016/0921-5107(91)90159-S⟩
Materials Science and Engineering: B, Elsevier, 1991, 9 (1-3), pp.121-124. ⟨10.1016/0921-5107(91)90159-S⟩
The growth in the miscibility gap and the characterization of MOVPE Ga1−xInxAsySb1−y quaternary layers have been undertaken. The experimental conditions have been determined to obtain quaternary epilayers in the miscibility gap grown on GaSb with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f335c01afb1f70f996fd6681e039e60
https://doi.org/10.1016/0921-5107(91)90159-s
https://doi.org/10.1016/0921-5107(91)90159-s
Publikováno v:
Journal of Electronic Materials. 19:187-195
The growth of GaSb by MOVPE and itsn-type doping using a dimethyltellurium dopant source are investigated. The results of growth rate, morphology and Te incorporation as a function of growth parameters are given. Increasing growth temperature and V/I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::075c562265d5efc326b193f74b97fd11
https://doi.org/10.1007/bf02651744
https://doi.org/10.1007/bf02651744
Publikováno v:
Sixth International Conference Metalorganic Vapor Phase Epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::783d45f2b187a4caf46049c56f3e72cd
https://doi.org/10.1109/movpe.1992.664948
https://doi.org/10.1109/movpe.1992.664948
Publikováno v:
Sixth International Conference Metalorganic Vapor Phase Epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a469bdc0e8482eda786c2d5e09578d33
https://doi.org/10.1109/movpe.1992.664956
https://doi.org/10.1109/movpe.1992.664956
Publikováno v:
Journal of Materials Science: Materials in Electronics. 7
Metallorganic chemical vapour deposition (MOCVD) of Cu-In-Se ternary compounds is performed in a horizontal reactor at atmospheric pressure. A copper precursor has been specially developed for this purpose and is used around room temperature. It is h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eed4a031f7f9f9ffa7185429958a958
https://doi.org/10.1007/bf00133116
https://doi.org/10.1007/bf00133116
Publikováno v:
Journal of The Electrochemical Society
Journal of The Electrochemical Society, Electrochemical Society, 1993, 140 (8), pp.2406. ⟨10.1149/1.2220833⟩
Journal of The Electrochemical Society, Electrochemical Society, 1993, 140 (8), pp.2406. ⟨10.1149/1.2220833⟩
The growth of n-type Ga 1-x In x Sb (x≥35%) by metal organic vapor phase epitaxy (MOVPE) using a dimethyltellurium dopant source is investigated both on (001) GaSb misoriented 2 o off touwards and (100) GaAs substrates. The results of growth rate,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31200446c618d74458290eeb09e97a8a
https://hal.archives-ouvertes.fr/hal-02048519
https://hal.archives-ouvertes.fr/hal-02048519
Autor:
P.J. Walker, G. Bougnot, N.J. Mason, Frédérique Pascal-Delannoy, G. G. Allogho, Alain Giani, J. Bougnot
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 1992, 124 (1-4), pp.409-414. ⟨10.1016/0022-0248(92)90492-2⟩
Journal of Crystal Growth, Elsevier, 1992, 124 (1-4), pp.409-414. ⟨10.1016/0022-0248(92)90492-2⟩
We report a systematic investigation of the growth by MOVPE of a series of InGaSb photodiodes lattice-mismatched on GaSb substrates. The samples were grown in two atmospheric pressure MOVPE reactors and with different organometallic sources. We have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88dc78cba2a406958614601f2bf3ba18
https://hal.archives-ouvertes.fr/hal-02048417
https://hal.archives-ouvertes.fr/hal-02048417