Zobrazeno 1 - 10
of 116
pro vyhledávání: '"J. Bonnet-Gamard"'
Autor:
C. Fortin, Antonina Plais, E. Derouin, Christophe Starck, J. Bonnet-Gamard, D. Carpentier, Joel Jacquet, N. Bouche, Leon Goldstein, Fabienne Gaborit, J.C. Remy, Francois Brillouet, Paul Salet, J. Boucart
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:520-529
We present and give details about the conception and realization of the first monolithic long wavelength vertical-cavity surface-emitting laser (VCSEL) operating continuous wave at room temperature. This approach relies on two originalities: a metamo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dc99b8f1870467512e644b26070dd6a
https://doi.org/10.1109/2944.788414
https://doi.org/10.1109/2944.788414
Autor:
C. Starck, J. Boucart, A. Plais, N. Bouche, E. Derouin, A. Pinquier, F. Gaborit, J. Bonnet-Gamard, C. Fortin, L. Goldstein, F. Brillouet, P. Salet, D. Carpentier, M.-F. Martineau, J. Jacquet
Publikováno v:
Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013).
Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3520c849313f3a4bf90b23bab5fa8b8a
https://doi.org/10.1109/cleo.1999.834437
https://doi.org/10.1109/cleo.1999.834437
Autor:
C. Starck, J. Boucart, A. Plais, N. Bouche, E. Derouin, A. Pinquier, F. Gaborit, J. Bonnet-Gamard, C. Fortin, L. Goldstein, F. Brillouet, P. Salet, D. Carpentier, J. Jacquet
Publikováno v:
Scopus-Elsevier
A novel 1.55-/spl mu/m surface-emitting laser structure based on a tunnel junction for current injection and GaAs-AlAs top mirror directly grown on InP cavity in a 2 in. compatible process allows cw operation at room temperature.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::291d9490bfc3ea1ea607af093ba58bc4
https://doi.org/10.1109/ofc.1999.766004
https://doi.org/10.1109/ofc.1999.766004
Autor:
E. Derouin, P. Pagnod, Mohand Achouche, E. Boucherez, Louis Giraudet, D. Carpentier, V. Coupe, F. Devaux, J. Bonnet-Gamard, Christophe Jany, F. Poingt, S. Grosmaire, Fabrice Blache
Publikováno v:
Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551).
Side-illuminated photodiodes designed for surface hybrid integration on a silicon optical bench are described. InGaAs PIN photodiode chips fabricated on a 2inch-wafer with an integrated dry etched waveguide input facet with an antireflection coating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::267da90de9b92779af46784456267f8f
https://doi.org/10.1109/ecoc.2001.989105
https://doi.org/10.1109/ecoc.2001.989105
Autor:
Joseph Harari, Christophe Jany, P. Pagnod, Didier Decoster, V. Magnin, Jean Decobert, J. Bonnet-Gamard, Fabrice Blache, Louis Giraudet, E. Boucherez, D. Carpentier
Publikováno v:
Electronics Letters. 37:973
Evanescently coupled photodiodes have been designed for hybridisation on an Si platform. Diluted multimode waveguides have been optimised with a genetic algorithm. High efficiency photodiodes at both 1.3 and 1.5 /spl mu/m, with very low polarisation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f709ccce1a0f18bc46c36c6f6cc72531
https://doi.org/10.1049/el:20010664
https://doi.org/10.1049/el:20010664
Autor:
Kudryavtsev, K. E., Rumyantsev, V. V., Utochkin, V. V., Dubinov, A. A., Aleshkin, V. Ya., Zholudev, M. S., Mikhailov, N. N., Dvoretskii, S. A., Remesnik, V. G., Gavrilenko, V. I., Morozov, S. V.
Publikováno v:
Journal of Applied Physics; 2/21/2023, Vol. 133 Issue 7, p1-8, 8p
Publikováno v:
ResearcherID
Optical gain and laser emission have been studied in molecular beam epitaxy grown HgCdTe heterostructures emitting in the 1.9-3.5 μm wavelength range. Laser emission is observed up to room-temperature for samples emitting in the 1.9-2.5 μm range. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bed76d6b0f3274b9530656d56494a54
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996UH32400131&KeyUID=WOS:A1996UH32400131
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996UH32400131&KeyUID=WOS:A1996UH32400131
Autor:
Afonenko, A. A., Ushakov, D. V., Dubinov, A. A., Aleshkin, V. Ya., Morozov, S. V., Gavrilenko, V. I.
Publikováno v:
Journal of Applied Physics; 8/21/2022, Vol. 132 Issue 7, p1-11, 11p
Autor:
Kudryavtsev, K. E., Rumyantsev, V. V., Utochkin, V. V., Fadeev, M. A., Aleshkin, V. Ya., Dubinov, A. A., Zholudev, M. S., Mikhailov, N. N., Dvoretskii, S. A., Remesnik, V. G., Teppe, F., Gavrilenko, V. I., Morozov, S. V.
Publikováno v:
Journal of Applied Physics; 12/7/2021, Vol. 130 Issue 21, p1-9, 9p
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