Molecular Level Insights into the Structure of Active Sites of VAIO Mixed Oxides in Propane Ammoxidation

Autor: Chantal Lorentz, Angelika Brückner, Pierre Delichere, Ioan-Cezar Marcu, J. Bilde, C. Janke, Ionel Popescu, Stéphane Loridant, Jean-Marc M. Millet

Publikováno v: Journal of Physical Chemistry C
Journal of Physical Chemistry C, American Chemical Society, 2013, 117, pp.22926-22938. ⟨10.1021/jp407681r⟩

RAFFINAGE+JBI:CJN:CLO:PDE:SLO:JMI; International audience; Several techniques such as Al-27 800-MHz NMR, X-ray diffraction (XRD; powder), X-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance (EPR), Raman spectroscopy, and electrica

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c41374c86806a1dcc2963f8e1e962da
https://hal.archives-ouvertes.fr/hal-00924003

Catalytic properties of nitrided V/Al/O-mixed oxides in the ammoxidation of propane and new efficient preparation method for the catalysts

Autor: Angelika Brückner, J. Bilde, C. Janke, Jean-Marc M. Millet

Publikováno v: Catalysis Today
Catalysis Today, Elsevier, 2012, 192, pp.10-15. ⟨10.1016/j.cattod.2011.12.023⟩

RAFFINAGE+JBI:CJN; V/Al/O oxides have been prepared and tested as catalysts for the ammoxidation of propane into acrilonitrile at 500 degrees C. The high efficiency of these catalysts, which were partially nitrided under catalytic reaction conditions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd1f831f15521c2cdf2e14c257a1aac0
https://hal.archives-ouvertes.fr/hal-00741021

Highly selective isotropic etching processes

Autor: S. Borel, C. Arvet, J. Bilde, D. Louis

Publikováno v: Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference.

We show how it was possible to develop an etching process of SiGe with a high selectivity to similar materials such as nitride, oxide and even pure silicon. The study of the material and process parameters has lead to an understanding of the etching

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::737407211827ceded395620a2c43c35d
https://doi.org/10.1109/imnc.2003.1268782

Impact of Tunnel Etching Process on Electrical Performances of SON Devices

Autor: V. Caubet, S. Borel, C. Arvet, J. Bilde, D. Chanemougame, S. Monfray, R. Ranica, P. Mazoyer, T. Skotnicki

Publikováno v: Japanese Journal of Applied Physics. 44:5795

The removal of a sacrificial SiGe layer by isotropic etching has been newly improved for silicon-on-nothing (SON) technology by increasing etching selectivity to the Si conduction channel. Still based on CF4 plasma chemistry, power and pressure are a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c7c890c2551f3e1ca80e851901192c9
https://doi.org/10.1143/jjap.44.5795

Solvency II en Bazel II Overeenkomsten en verschillen

Autor: R. R. Doff, J. Bilderbeek

Publikováno v: MAB, Vol 81, Iss 1, Pp 28-34 (2007)

Solvency II, de richtlijn die het toezichtraamwerk voor verzekeraars herziet, krijgt concreet gestalte en komt naderbij. Inmiddels is de tweede Quantitative Impact Study (QIS 2) achter de rug. Een vergelijking met Bazel II ligt voor de hand. In dit a

Externí odkaz: https://doaj.org/article/8559f8f936584c7ab9639851e3429670