Zobrazeno 1 - 10
of 562
pro vyhledávání: '"J. Bennetto"'
Autor:
A. Agnihotri, M. Sandhu, Thomas English, J. Bennetto, Athanasios Raikos, Omar Khalid Yousif, Allan Stirling
Publikováno v:
Folia morphologica. 73(4)
Entrapment neuropathy of the supraclavicular nerve is rare and, when it occurs, is usually attributable to branching of the nerve into narrow bony clavicular canals. We describe another mechanism for entrapment of this nerve with the aberrant muscle;
Publikováno v:
Physical Review Letters. 77:1516-1519
Kink defects in the 90-degree partial dislocation in silicon are studied using a linear-scaling density-matrix technique. The asymmetric core reconstruction plays a crucial role, generating at least four distinct kink species as well as soliton defec
Autor:
Edward P. Acosta, Michele L. Turner, Chantelle J. Bennetto, Jennifer R. King, Jeffrey S. A. Stringer
Publikováno v:
Clinical Chemistry. 50:209-211
In sub-Saharan Africa, India, Southeast Asia, and other resource-poor regions of the world, the antiretroviral nonnucleoside reverse transcriptase inhibitor nevirapine (NVP) is widely prescribed for HIV treatment and prevention because of its relativ
Autor:
Lestarevic, Sanja1 sanja.lestarevic@imh.org.rs, Kalanj, Marko1, Milutinovic, Luka1, Grujicic, Roberto1, Vasic, Jelena1, Maslak, Jovana1, Mitkovic-Voncina, Marija1,2, Ljubomirovic, Natasa1,3, Pejovic-Milovancevic, Milica1,2
Publikováno v:
Journal of Autism & Developmental Disorders. Sep2024, Vol. 54 Issue 9, p3423-3435. 13p.
We investigate the energetics of the single-period and double-period core reconstructions of the 90-degree partial dislocation in the homopolar semiconductors C, Si, and Ge. The double-period geometry is found to be lower in energy in all three mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38536947a8991314b578539f1f0f0ac0
http://arxiv.org/abs/cond-mat/9806274
http://arxiv.org/abs/cond-mat/9806274
We investigate the physics of the core reconstruction and associated structural excitations (reconstruction defects and kinks) of dislocations in silicon, using a linear-scaling density-matrix technique. The two predominant dislocations (the 90-degre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d00f2f992efcdedd27e4a169666d9d01
http://arxiv.org/abs/cond-mat/9707152
http://arxiv.org/abs/cond-mat/9707152
Autor:
J. Bennetto, David Vanderbilt
We calculate the transverse effective charges of zincblende compound semiconductors using Harrison's tight-binding model to describe the electronic structure. Our results, which are essentially exact within the model, are found to be in much better a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a609f1687e2691df2fe07055e3e3e322
Autor:
Gibson, Mindy T.1 (AUTHOR), Schmidt-Kassow, Maren2 (AUTHOR), Paulmann, Silke1 (AUTHOR) paulmann@essex.ac.uk
Publikováno v:
PLoS ONE. 10/24/2023, Vol. 18 Issue 10, p1-16. 16p.
Publikováno v:
Education & Training in Autism & Developmental Disabilities; Dec2024, Vol. 59 Issue 4, p429-442, 14p
Publikováno v:
Autism: The International Journal of Research & Practice; Nov2024, Vol. 28 Issue 11, p2754-2767, 14p