Zobrazeno 1 - 10
of 82
pro vyhledávání: '"J. Belhadi"'
Autor:
Mimoun El Marssi, Youssef El Amraoui, Abdelilah Lahmar, J. Belhadi, Hamid Ez-Zahraouy, H. Zaari, Manal Benyoussef
Publikováno v:
Journal of Rare Earths
Na0.5(Bi3/4RE1/4)0.5TiO3 (RENBT, RE = Nd, Gd, Dy, and Ho) compounds were investigated in the framework of first-principles calculations using the full potential linearized augmented plane wave (FP-LAPW) method based on the spin-polarized density func
Autor:
Matjaž Spreitzer, Abdelilah Lahmar, Zdravko Kutnjak, Moneim Zannen, Mimoun El Marssi, Mohamed Aissa, Manal Benyoussef, J. Belhadi
Publikováno v:
Ceramics International. 47:31286-31293
Undoped and Dy3+ doped 0.975 K1/2Na1/2NbO3-0.025Na1/2Bi1/2TiO3 (0.975KNN-0.025NBT) ceramics were synthesized using the solid-state synthesis method. X-ray diffraction analysis revealed pure perovskite structure without any secondary phases. The diele
Autor:
J. Belhadi, Damjan Vengust, Bouchaib Manoun, Moneim Zannen, M. Spreitzer, Abdelilah Lahmar, Zdravko Kutnjak, Mimoun El Marssi, Manal Benyoussef
Publikováno v:
Ceramics International. 47:26539-26551
Lead-free relaxor ferroelectric Na0·5(Bi1-xNdx)0.5TiO3 (xNdNBT, x = 0–30%) ceramics were synthesized using the conventional solid-state method. Detailed Rietveld refinement revealed transitions from rhombohedral (x = 0, 5%), to a coexistence of R3
Autor:
Hana Uršič, Urška Gabor, Zishen Tian, Matjaž Spreitzer, Lane W. Martin, Jieun Kim, J. Belhadi, Gertjan Koster, Nina Daneu
Publikováno v:
RSC advances, vol 11, iss 3
RSC advances, 11(3), 1222-1232. Royal Society of Chemistry
RSC Advances, vol 11, iss 3
RSC advances, 11(3), 1222-1232. Royal Society of Chemistry
RSC Advances, vol 11, iss 3
Controlling the growth of complex relaxor ferroelectric thin films and understanding the relationship between biaxial strain-structural domain characteristics are desirable for designing materials with a high electromechanical response. For this purp
Autor:
J. Belhadi, Mimoun El Marssi, Manal Benyoussef, Abdelilah Lahmar, Moneim Zannen, J.-L. Dellis, Bouchaib Manoun
Publikováno v:
Ceramics International
Ceramics International, Elsevier, 2020, 46, pp.10979-10991. ⟨10.1016/j.ceramint.2020.01.114⟩
Ceramics International, Elsevier, 2020, 46, pp.10979-10991. ⟨10.1016/j.ceramint.2020.01.114⟩
In this work structural refinement, complex impedance spectroscopy (CIS) and Raman spectroscopy have been investigated on Na0.5(Bi1-xDyx)0.5TiO3 (xDyNBT) ceramic systems with x = 0, 2, 5 and 15%. The pure NBT, 2DyNBT and 5DyNBT compounds crystallize
Autor:
J. Belhadi, Z. Hanani, U. Trstenjak, N. A. Shepelin, V. Bobnar, G. Koster, J. Hlinka, D. Pergolesi, T. Lippert, M. El Marssi, M. Spreitzer
Publikováno v:
Applied physics letters, 121(18):182903. American Institute of Physics
Tuning and stabilizing a large imprint in epitaxial relaxor ferroelectric thin films is one of the key factors for designing micro-electromechanical devices with an enhanced figure of merit (FOM). In this work, epitaxial 500 nm-thick 0.67Pb(Mg1/3Nb2/
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Autor:
Kader Zaidat, J. Belhadi, M. El Marssi, Hamadi Khemakhem, Abdelilah Lahmar, Manal Benyoussef, M. Zannen
Publikováno v:
Superlattices and Microstructures
Superlattices and Microstructures, Elsevier, 2019, 127, pp.43-48. ⟨10.1016/j.spmi.2018.03.041⟩
Superlattices and Microstructures, Elsevier, 2019, 127, pp.43-48. ⟨10.1016/j.spmi.2018.03.041⟩
International audience; Lead-free ferroelectric Na0.5Bi0.5TiO3 (NBT) and NBT-doped Ln (Ln = Er and Ho) in both bulk and thin films forms were processed via solid-state reaction and solution deposition respectively. SEM investigations showed dense sam
Publikováno v:
Materials Letters. 234:279-282
[BaTiO3]Λ/2/[BaZrO3]Λ/2 superlattices (SLs) were grown by pulsed laser deposition (PLD) technique and their dielectric tunability, ferroelectric, and energy storage properties were investigated by varying the modulation periodicity (Λ). The maximu
Autor:
K. Zellama, R. Lardjani, M. Clin, N. Lemée, T. Sahraoui, Andreas Zeinert, R. Baghdad, Abderrahmane Reggad, J. Belhadi
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 14:59-71