Shallow implanted SiC spin qubits used for sensing an internal spin bath and external YIG spins

Autor: J. Bartringer, Thomas Fix, Dominique Muller, S. Roques, Jérôme Tribollet

Publikováno v: Nanoscale
Nanoscale, Royal Society of Chemistry, 2021, ⟨10.1039/D1NR02877D⟩
Nanoscale, 2021, ⟨10.1039/D1NR02877D⟩

Silicon vacancy (VSi) color centers in bulk SiC are excellent electron spin qubits. However, most spin based quantum devices require shallow spin qubits, whose dynamics is often different from that of bulk ones. Here, we demonstrate (i) a new method

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29633befa9753ad76e4a4f79688afbb5
https://pubmed.ncbi.nlm.nih.gov/34477657

Insights on hexagonal TbMnO3 for optoelectronic applications: From powders to thin films

Autor: Thomas Fix, J. Bartringer, A. Slaoui, Jean-Luc Rehspringer, Guy Schmerber, S. Roques, Mircea V. Rastei

Publikováno v: Journal of Alloys and Compounds
Journal of Alloys and Compounds, Elsevier, 2021, ⟨10.1016/j.jallcom.2021.160922⟩
Journal of Alloys and Compounds, 2021, ⟨10.1016/j.jallcom.2021.160922⟩

In this work, we first report on the fabrication of TbMnO3 (TMO) powders and doping with In, Lu, Gd, Sm, Nd, Y. In and Nd atoms were found to significantly reduce the cell size while preserving an orthorhombic structure. Conversely, we show that hexa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9d6abba4a1f5a427b64ff57b8e38906
https://hal.archives-ouvertes.fr/hal-03274304/file/TMO-author.pdf

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Structural properties of Ge nanocrystals synthesized by a PVD nanocluster source

Autor: Abdelilah Slaoui, Laure Guétaz, H. Szambolics, J. Bartringer, S. Parola, Etienne Quesnel, Viviane Muffato

Publikováno v: Journal of Nanoparticle Research
Journal of Nanoparticle Research, 2012, 14, pp.1085_1-9

In this study, the synthesis of Ge nanoparticles by a physical vapour deposition (PVD) nanocluster source has been investigated. We typically obtain Ge nanoparticles with a mean diameter between 4 and 9 nm. The microstructure of Ge nanoparticles was

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a4c0daa312ca8b3d05345c5d62ab5b0
https://doi.org/10.1007/s11051-012-1085-0

Selective emitter formation by laser doping of spin-on sources

Autor: J. Bartringer, P. Prathap, Abdelilah Slaoui

Formation of selective emitter (SE) structures with a controlled dopant profile by laser (KrF Excimer laser at 248 nm) annealing of spin-on dopant sources is presented. Different barrier layers (BL) like spin-on glass (SoG), PECVD deposited SiN and S

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0abfcb4c6928ea8234a32cee5d0aee5f
https://hal.archives-ouvertes.fr/hal-00737968