Zobrazeno 1 - 10
of 221
pro vyhledávání: '"J. Bak-Misiuk"'
Publikováno v:
Crystallography Reports. 58:998-1001
Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500°C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d9defcfc41d4c4aab4bde7061f5d65
https://doi.org/10.1134/s1063774513070043
https://doi.org/10.1134/s1063774513070043
Autor:
Jaroslaw Z. Domagala, Tomasz Wojciechowski, Janusz Sadowski, Boguslawa Kurowska, Elżbieta Dynowska, J. Bak-Misiuk, W. Caliebe, Sławomir Kret, A. Kwiatkowski, P. Romanowski
Publikováno v:
Radiation Physics and Chemistry. 80:1051-1057
The results of structural and magnetic characterization of GaMnSb layers grown on GaSb(0 0 1) and GaAs(1 1 1) substrates are presented. The presence of hexagonal, highly oriented MnSb inclusions embedded in GaSb matrix has been demonstrated. The latt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c4246f2f1d106a66bcccfeaf0ed61d9
https://doi.org/10.1016/j.radphyschem.2011.02.005
https://doi.org/10.1016/j.radphyschem.2011.02.005
Autor:
Jaroslaw Z. Domagala, K. Lawniczak-Jablonska, P. Romanowski, Marcin T. Klepka, Piotr Dłużewski, J. Libera, Elżbieta Dynowska, Janusz Sadowski, A. Kwiatkowski, Andrzej Twardowski, J. Bak-Misiuk, Anna Wolska, Adam Barcz, D. Wasik
Publikováno v:
Journal of Solid State Chemistry. 184:1530-1539
Structural and magnetic properties of GaAs thin films with embedded nanoclusters were investigated as a function of the annealing temperature and Mn content. Surprisingly, the presence of two kinds of nanoclusters with different structure was detecte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9a38c76ba75a4abe8944843c4281f75
https://doi.org/10.1016/j.jssc.2011.04.033
https://doi.org/10.1016/j.jssc.2011.04.033
Autor:
W. Caliebe, E. Lusakowska, Elżbieta Dynowska, Adam Barcz, Andrzej Misiuk, J. Bak-Misiuk, W. Paszkowicz, P. Romanowski, Janusz Sadowski, Jaroslaw Z. Domagala
Publikováno v:
Radiation Physics and Chemistry. 78:S116-S119
GaMnAs layers on (0 0 1)-oriented GaAs substrates were grown by the molecular beam epitaxy (MBE) method. Structural properties of samples processed at up to 920 K under hydrostatic Ar pressure up to 1.1 GPa were investigated by X-ray, secondary ion m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35dbafbec7bcffc1a7c1f31f8a6bb0dd
https://doi.org/10.1016/j.radphyschem.2009.03.083
https://doi.org/10.1016/j.radphyschem.2009.03.083
Publikováno v:
Sensor Electronics and Microsystem Technologies. 4:54-59
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1cb44a83d171de57ca02158b5f938f4
https://doi.org/10.18524/1815-7459.2007.3.114023
https://doi.org/10.18524/1815-7459.2007.3.114023
Publikováno v:
Journal of Luminescence. 121:383-386
Photoluminescence (PL) from He + -implanted Si (Si:He, He + dose—2×10 16 cm −2 , at 150 keV) is related to its microstructure; it has been tuned by processing at 720–1400 K under hydrostatic Ar pressure (HP, up to 1.2 GPa). Processing of Si:He
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39f3a0eadc40419b2533b7cbcdc673ab
https://doi.org/10.1016/j.jlumin.2006.08.028
https://doi.org/10.1016/j.jlumin.2006.08.028
Publikováno v:
The European Physical Journal Applied Physics. 27:415-418
Defects in the Si layered structures, Si:H(D), prepared by implantation with H 2 + /D + , and their changes resulting from the treatment under enhanced pressure (HP), were investigated by X-ray diffraction and transmission electron microscopy (XTEM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b4511e39febb5aae34992872c2d3a1b
https://doi.org/10.1051/epjap:2004119-10
https://doi.org/10.1051/epjap:2004119-10
Publikováno v:
Radiation Effects and Defects in Solids. 158:407-410
The effect of annealing at 1520–1570 K under high pressure (HP, up to 1.2GPa) on the structure of SiO2 in oxygen implanted silicon (Si:O) and in silicon with buried SiO2 layer (SOI) was investigated by TEM, X-Ray and FTIR methods. Depending on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a151fdeb74f721dfc27c553c782088dc
https://doi.org/10.1080/1042015021000052133
https://doi.org/10.1080/1042015021000052133
Publikováno v:
Acta Physica Polonica A. 121:903-905
Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500 degrees C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga1-xMnxAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230 degrees C by molecular beam epitaxy me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73890bf7bb6dce6bce9713250931bf97
https://doi.org/10.12693/aphyspola.121.903
https://doi.org/10.12693/aphyspola.121.903
Autor:
J. Bak-Misiuk, H.B. Surma, I.V Antonova, J. Katcki, A. Misiuk, J. Ratajczak, E. P. Neustroev, A. Bachrouri, Albert Romano-Rodriguez, J. Adamczewska, V. Raineri
Publikováno v:
Computational Materials Science. 21:515-525
The effect of annealing at up to 1550 K under argon pressure up to 1.5 GPa (high temperature–high pressure (HT–HP) treatment) on silicon implanted with helium, hydrogen or oxygen (Si:He, Si:H or Si:O) was investigated by X-ray, secondary ions mas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbb604da311dbee53001a5a5c5a3b67f
https://doi.org/10.1016/s0927-0256(01)00200-2
https://doi.org/10.1016/s0927-0256(01)00200-2