Zobrazeno 1 - 10
of 31
pro vyhledávání: '"J. B. Varesi"'
Autor:
L. A. Almeida, James D. Benson, J. K. Markunas, Marvin Jaime-Vasquez, J. B. Varesi, Andrew J. Stoltz, M. Martinka
Publikováno v:
Journal of Electronic Materials. 37:152-156
Brief low-energy helium plasma exposure of mercury cadmium telluride and indium antimonide results in oxide- and elemental-component-free, nearly stoichiometric surfaces. In these initial experiments, the only remaining residue is a topmost trace lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95c5d0ecee4982ea97dcb81b58cf0cdf
https://doi.org/10.1007/s11664-007-0309-z
https://doi.org/10.1007/s11664-007-0309-z
Publikováno v:
Journal of Electronic Materials. 36:1007-1012
The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36563d0a2027fdbf4f22ca1b574755a4
https://doi.org/10.1007/s11664-007-0163-z
https://doi.org/10.1007/s11664-007-0163-z
Publikováno v:
Journal of Electronic Materials. 35:1461-1464
High-density argon-hydrogen plasmas have been demonstrated to be very effective as etchants of CdTe, CdZnTe, and HgCdTe materials for focal plane array applications. Understanding the physical, chemical, and electrical characteristics of these surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1feefd32921a21b4884ee8b530f409b
https://doi.org/10.1007/s11664-006-0284-9
https://doi.org/10.1007/s11664-006-0284-9
Publikováno v:
Journal of Electronic Materials. 35:1443-1448
We have examined the formation and removal of native surface films on Hg1−xCdxTe (n-type, x=0.2). Samples were etched with a Br-based solution and then characterized by spectroscopic ellipsometry and X-ray photoelectron spectroscopy. A second set o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50347fcf44057914b09393d011314c53
https://doi.org/10.1007/s11664-006-0281-z
https://doi.org/10.1007/s11664-006-0281-z
Autor:
J. K. Markunas, J.C. Molstad, J. B. Varesi, Scott M. Johnson, Andrew J. Stoltz, Edward P. Smith, L. A. Almeida, M. Jaime-Vasquez, J. D. Benson
Publikováno v:
Journal of Electronic Materials. 35:1434-1442
The surface of (111)A HgCdTe has been studied by reflection high-energy electron diffraction and atomic force microscopy (AFM). The as-grown liquid-phase epitaxy (LPE) surface has bilayer (3.7 ± 0.2 A) step/terrace structures, macro-steps, and cross
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6767fa580c61b9add010deb3c2ecb61
https://doi.org/10.1007/s11664-006-0280-0
https://doi.org/10.1007/s11664-006-0280-0
Autor:
J. B. Varesi, E. A. Patten, P. M. Goetz, Edward P. Smith, Scott M. Johnson, Brett Z. Nosho, J. D. Benson, G. M. Venzor, John A. Roth, W. A. Radford, Andrew J. Stoltz, J. E. Jensen
Publikováno v:
Journal of Electronic Materials. 35:1145-1152
High-performance 20-µm unit-cell two-color detectors using an n-p+-n HgCdTe triple-layer heterojunction (TLHJ) device architecture grown by molecular beam epitaxy (MBE) on (211)-oriented CdZnTe substrates with midwavelength (MW) infrared and long wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d65181404cbd2e2b0a039e755b316572
https://doi.org/10.1007/s11664-006-0234-6
https://doi.org/10.1007/s11664-006-0234-6
Publikováno v:
Journal of Electronic Materials. 34:1242-1248
(211) oriented silicon substrates were patterned and etched to give mesas of various sizes and shapes. Cadmium telluride epitaxial layers were deposited on the patterned substrates by molecular beam epitaxy (MBE). Dislocation termini in the epilayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47dcce723fc6884d18b57a3da785de64
https://doi.org/10.1007/s11664-005-0269-0
https://doi.org/10.1007/s11664-005-0269-0
Autor:
Scott M. Johnson, J. B. Varesi, M. Martinka, Andrew J. Stoltz, P. R. Boyd, Edward P. Smith, John H. Dinan, J. D. Benson, L. A. Almeida, J. K. Markunas, A. W. Kaleczyc
Publikováno v:
Journal of Electronic Materials. 34:726-732
The surface of (211)B HgCdTe has been studied by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). RHEED analysis of the as-grown Hg-rich molecular beam epitaxy (MBE) (211)B HgCdTe suggests the surface reconstruct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56acd2668b87c89925d304b18f39e1bf
https://doi.org/10.1007/s11664-005-0011-y
https://doi.org/10.1007/s11664-005-0011-y
Autor:
M. D. Newton, M. V. Liguori, Andrew J. Stoltz, W. A. Radford, John H. Dinan, R. E. Bornfreund, J. D. Benson, J. K. Gleason, J. B. Varesi, Scott M. Johnson, G. M. Venzor, Edward P. Smith
Publikováno v:
Journal of Electronic Materials. 34:746-753
Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::957a49dba808a45fffbf6a114c3cfcc3
https://doi.org/10.1007/s11664-005-0014-8
https://doi.org/10.1007/s11664-005-0014-8
Autor:
L. A. Almeida, J. B. Varesi, P. R. Boyd, A. W. Kaleczyc, Whitney Mason, Andrew J. Stoltz, J. D. Benson, John H. Dinan, M. Martinka
Publikováno v:
Journal of Electronic Materials. 34:758-761
We have examined the etching of HgCdTe (x=0.2) with bromine/ethylene glycol (Br/EG) solutions. Using a spectroscopic ellipsometer, we tracked the ellipsometric parameters (ψ and Δ) of the freshly etched HgCdTe surfaces. Parameters ψ and Δ were me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b60ed95cc832cdfca97877c3977d6951
https://doi.org/10.1007/s11664-005-0016-6
https://doi.org/10.1007/s11664-005-0016-6