Zobrazeno 1 - 10
of 43
pro vyhledávání: '"J. B. Theeten"'
Publikováno v:
IEEE Transactions on Consumer Electronics. 51:430-437
A system architecture for mobile terminals is proposed, in which the signal processing for the cellular communications channel and the associated protocol stack processing are implemented independent of the application system, which handles audio and
Publikováno v:
Applied Surface Science. 44:309-320
Spectroscopic ellipsometry at high lateral resolution and grazing X-ray reflectometry are used as non-destructive techniques and as complement to X-ray photoelectron spectroscopy, to characterize the sulfide layers formed at the surface of InP by pla
Publikováno v:
International Neural Network Conference ISBN: 9780792308317
Neural network simulations are often limited because of the time required for both the learning and the evaluation phase of the simulation. Our parallel digital LNcuro circuit drastically reduces these times by updating synaptic coefficients related
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8d8ccdea71c63a3e753455c4cba5886
https://doi.org/10.1007/978-94-009-0643-3_11
https://doi.org/10.1007/978-94-009-0643-3_11
Autor:
J. B. Theeten, HH Hidde Brongersma
Publikováno v:
Surface Science. 54:519-524
Autor:
G. Armand, J. B. Theeten
Publikováno v:
Physical Review B. 9:3969-3984
Publikováno v:
Journal of Crystal Growth. 71:141-148
Growth and optical assessment of very low attenuation (1.3 d B /cm for multimode and 1.5 d B /cm for single mode waveguides) GaAs waveguiding structures are reported. They are obtained by selective chloride vapour phase epitaxy. Various prismatic pro
Publikováno v:
Journal of Applied Physics. 49:6097-6102
At certain wavelengths, depending on the thickness of a thin transparent dielectric layer on an absorbing substrate, a standing‐wave condition can be produced that efficiently couples the S wave to the substrate, simulating a cavity resonance in th
Autor:
J. B. Theeten, D. E. Aspnes
Publikováno v:
Journal of Applied Physics. 50:4928-4935
Expressions for the dielectric function of Si‐SiO2 and Si‐Si3N4 composites are obtained by combining the Si‐centered tetrahedral model of Philipp with composite‐media theory. The similarity between dielectric‐function spectra of a‐Si and
Publikováno v:
Journal of Applied Physics. 52:6788-6797
The electrical properties of Si3N4/SiO2/Si structures, which are currently used in integrated circuits technology, are largely dependent upon the structure and the chemical composition of the interface regions which may be a few A thick. Such locked
Publikováno v:
Journal of Crystal Growth. 46:245-252
A fast automatic ellipsometer is associated with an organometallic CVD system for a surface analysis of GaAlAs/GaAs heterostructures during their growth. The capabilities of the ellipsometer are first illustrated: a real time determination of the rat