Zobrazeno 1 - 8
of 8
pro vyhledávání: '"J. B. Petit"'
Publikováno v:
Journal of The Electrochemical Society. 137:1598-1603
Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341f5b647b16e01dcacddb7f66c410ef
https://doi.org/10.1149/1.2086735
https://doi.org/10.1149/1.2086735
Autor:
J. A. Powell, L. G. Matus, Wolfgang J. Choyke, J. B. Petit, M. Yoganathan, James H. Edgar, J. W. Yang, L. L. Clemen, I. G. Jenkins, Pirouz Pirouz
Publikováno v:
Applied Physics Letters. 59:333-335
We have found that, with proper pregrowth surface treatment, 6H‐SiC single‐crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H‐SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da1c77bf097ec4cb7f4ca357c70a823
https://doi.org/10.1063/1.105587
https://doi.org/10.1063/1.105587
Autor:
J. W. Yang, Wolfgang J. Choyke, J. A. Powell, M. Yoganathan, James H. Edgar, I. G. Jenkins, L. G. Matus, J. B. Petit, Pirouz Pirouz, L. L. Clemen
Publikováno v:
Applied Physics Letters. 59:183-185
Both 3C‐SiC and 6H‐SiC single‐crystal films can be grown on vicinal (0001) 6H‐SiC wafers. We have found that oxidation can be a powerful diagnostic process for (1) ‘‘color mapping’’ the 3C and 6H regions of these films, (2) decorating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa62f25589f2df6000971160a5421e1a
https://doi.org/10.1063/1.105960
https://doi.org/10.1063/1.105960
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642848063
This paper presents kinetic data from oxidation studies of the polar faces for 3C and 6H Sic in wet and dry oxidizing ambients. Values for the linear and parabolic rate constants were obtained, as well as preliminary results for the activation energi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03de7e1ac04c440745bfa44342ae4266
https://doi.org/10.1007/978-3-642-84804-9_27
https://doi.org/10.1007/978-3-642-84804-9_27
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642844041
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2912aeb7a1e84b7e5aa59c6671659787
https://doi.org/10.1007/978-3-642-84402-7_48
https://doi.org/10.1007/978-3-642-84402-7_48
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642848063
Advances have been made in the understanding of the mechanisms that control polytype formation during the chemical vapor deposition of epitaxial SiC films on vicinal (0001) 6H-SiC wafers. Processes based on this new understanding have been developed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3ac066cc2632cdab2179831c3e581d1
https://doi.org/10.1007/978-3-642-84804-9_3
https://doi.org/10.1007/978-3-642-84804-9_3
Akademický článek
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Publikováno v:
MRS Proceedings. 162
Current-voltage characteristics of Au contacts formed on β-SiC films grown heteroepitaxially on both nominally (100) oriented and off-axis (100) silicon substrates have been investigated. Logarithmic plots of the I-V characteristics in the forward d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::550c725b92d660ee25d8d3ccbf87de46
https://doi.org/10.1557/proc-162-489
https://doi.org/10.1557/proc-162-489