Zobrazeno 1 - 10
of 14
pro vyhledávání: '"J. B. Malherbe"'
Autor:
T. F. Mokgadi, Z. A. Y. Abdalla, M. Madhuku, E. G. Njoroge, M. Mlambo, P. Mdluli, A. Sohatsky, V. A. Skuratov, J. B. Malherbe, T. T. Hlatshwayo
Publikováno v:
Frontiers in Materials, Vol 10 (2023)
The presence of radiation-induced defects and the high temperature of implantation are breeding grounds for helium (He) to accumulate and form He-induced defects (bubbles, blisters, craters, and cavities) in silicon carbide (SiC). In this work, the i
Externí odkaz:
https://doaj.org/article/5a05b8d6160b478d9f7f3dc7cb907423
Autor:
H. A. A. Abdelbagi, T. A. O. Jafer, V. A. Skuratov, E. G. Njoroge, M. Mlambo, T. T. Hlatshwayo, J. B. Malherbe
Publikováno v:
Frontiers in Nuclear Engineering. 1
Polycrystalline SiC wafers were implanted with 360 keV strontium (Sr) ions at room temperature (RT)to a fluence of 2 × 1016 cm−2. Some of the implanted samples were irradiated with xenon (Xe) ions of 167 MeV to a fluence of 3.4 × 1014 cm−2 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cafdd50f53ed6458d6887e8f430b53f
https://doi.org/10.3389/fnuen.2022.1034114
https://doi.org/10.3389/fnuen.2022.1034114
Publikováno v:
Journal of Applied Physics. 84:2565-2570
Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f212975abd46e05310ce8611c1c6b911
https://doi.org/10.1063/1.368439
https://doi.org/10.1063/1.368439
Publikováno v:
Journal of Applied Physics. 83:4075-4080
The modification in the G-line (969.5 meV) and the C-line (789.4 meV) photoluminescence (PL) intensities were studied as a function of the fluence, energy, and mass of the bombarding ions (He, Ne, Ar, and Kr). The intensities of the luminescent lines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6ea20aa43495aa406232aa83c2d187c
https://doi.org/10.1063/1.367227
https://doi.org/10.1063/1.367227
Publikováno v:
Surface and Interface Analysis. 17:719-725
The previously reported1,2 effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth ‘cones
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f9238288952935114ad1ebc4591dfb7
https://doi.org/10.1002/sia.740171006
https://doi.org/10.1002/sia.740171006
Publikováno v:
Scopus-Elsevier
We have used deep level transient spectroscopy (DLTS) and photoluminescence (PL) to determine the electronic and optical properties of the defects created during 1 keV He-, Ne- and Ar-ion bombardment. Except for their different relative concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abde62889060c06c18edac9a613a06bd
https://doi.org/10.1109/commad.1996.610094
https://doi.org/10.1109/commad.1996.610094
Publikováno v:
Journal of Applied Physics. 71:2757-2759
The effect of 150‐keV Ar+ ion implantation of Cr/p‐Si(100) Schottky contacts was studied by measuring the current voltage characteristics over the temperature range 293–373 K before and after different doses of ion bombardment. The characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::061a907b79917ff423d8fc21f0627ee8
https://doi.org/10.1063/1.351049
https://doi.org/10.1063/1.351049
Autor:
J. B. Malherbe
Publikováno v:
Radiation Effects. 70:261-274
The projected ranges and straggling of 0.25 to 2.5 keV nitrogen atoms in silicon were determined by means of Auger electron spectroscopy combined with argon sputter depth profiling. The results show excellent correspondence with experimental measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::743a1239a7652e8ae2d15442444a0df3
https://doi.org/10.1080/00337578308219221
https://doi.org/10.1080/00337578308219221
Autor:
T B Scheffler, J B Malherbe
Publikováno v:
Journal of Physics A: Mathematical and General. 12:1011-1023
Simple yet accurate approximate formulae for the physically interesting complex eigenvalues for a delta function well plus linear potential are presented, and their results compared with numerical results accurate to twelve significant figures. By a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebd8a91c9b5777ea2ca6456c1855573e
https://doi.org/10.1088/0305-4470/12/7/017
https://doi.org/10.1088/0305-4470/12/7/017
Autor:
H. W. Alberts, J. B. Malherbe
Publikováno v:
Radiation Effects. 69:231-238
Energy loss and straggling for protons, deuterons and α-particles in thin gold foils were measured by the indirect transmission technique. The measured stopping powers of the hydrogen ions agree reasonably well with the semi-empirical values of Ande
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4809d4aa59d1adc53723197354ba8cd5
https://doi.org/10.1080/00337578308217825
https://doi.org/10.1080/00337578308217825