Zobrazeno 1 - 10
of 12
pro vyhledávání: '"J. B. Kruger"'
Autor:
J. E. Turner, Krishna Shenai, Shuit-Tong Lee, E.A. Perez-Albuerne, R. R. Speth, N. Meyyappan, D. Dallmann, John H. Booske, J. B. Kruger, Ling Zhang, Matthew Goeckner, Paul Rissman, J. L. Shohet
Publikováno v:
Applied Physics Letters. 65:962-964
The initial results from an investigation into the feasibility of using plasma source ion implantation (PSII) to produce separation by implantation of oxygen structures in silicon are reported. Oxygen ions are implanted into p‐type (111) oriented s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76a54043560f5b43df42740bbc8592d
https://doi.org/10.1063/1.112162
https://doi.org/10.1063/1.112162
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:01A109
The authors compare the effects of plasma charging and vacuum ultraviolet (VUV) irradiation on oxidized patterned Si structures with and without atomic-layer-deposited HfO2. It was found that, unlike planar oxidized Si wafers, oxidized patterned Si w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::175176214adeca2f5bf5947f66c2e54c
https://doi.org/10.1116/1.3654012
https://doi.org/10.1116/1.3654012
Publikováno v:
Journal of Applied Physics. 105:053308
Plasma-induced charging of patterned-dielectric structures during device fabrication can cause structural and electrical damage to devices. In this work, we report on vacuum-ultraviolet (VUV) radiation-induced charge depletion in plasma-charged patte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::942b664235fef7a679ad63b4ae9115d8
https://doi.org/10.1063/1.3088889
https://doi.org/10.1063/1.3088889
Publikováno v:
Applied Physics Letters. 91:182108
Electron shading, or topography-dependent charging, occurs during plasma exposure of wafers with high-aspect-ratio features due to an imbalance between the electron and ion currents that reach the feature bottoms. High-aspect-ratio pit structures wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aca924b39221d00518981b15717241f
https://doi.org/10.1063/1.2805023
https://doi.org/10.1063/1.2805023
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:366
We report comparison of etch damage between reactive ion and magnetron plasma etch environments and propose a qualitative model. Gate oxide damage is controlled by both plasma current and voltage and under some conditions can be worse for magnetron e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a734d27ebb6be299e2943e791ff5cc82
https://doi.org/10.1116/1.585577
https://doi.org/10.1116/1.585577
Publikováno v:
Journal of Vacuum Science and Technology. 19:1320-1324
Thin film silicon is found to be a desirable interlayer material for e‐beam lithography with multilayer resist systems. It is easily etched in CF4 plasma (Si/PMMA: 30/1) yet resists O2 reactive ion etch (Si/HPR: 1/300). It is sufficiently conductiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e40917236da90c4d00246052c459f0a
https://doi.org/10.1116/1.571268
https://doi.org/10.1116/1.571268
Autor:
J. B. Kruger, Anthony N. Palazotto
Publikováno v:
Journal of Engineering for Industry. 94:329-334
This paper attempts to develop a simple expression for springback in which material properties are considered through the use of the Ramberg–Osgood stress-strain equation. Since work has been carried out using wire specimens, two dimensional proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::974ab194febdeb8734b23d0cc91aabbc
https://doi.org/10.1115/1.3428141
https://doi.org/10.1115/1.3428141
Autor:
J. B. Kruger, R. K. Watts, T. G. Blocker, M. S. Shaikh, D. C. Guterman, D. C. Bullock, J. T. Carlo, H. M. Darley
Publikováno v:
Applied Physics Letters. 28:355-357
We describe microfabrication techniques for Permalloy circuits for magnetic bubbles of diameter 1 μm and 2 μm. Patterns are defined by electron beam on an x‐ray mask. X‐ray lithography and ion milling are employed to replicate the pattern in Pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f64200e7437e5722d2ee08d8f1bbb5a3
https://doi.org/10.1063/1.88757
https://doi.org/10.1063/1.88757
Publikováno v:
Radiology. 138(3)
Sensitometric measurements of scintillation camera images show that substantial changes in film response occur with variations in imaging time or dot focus. Both the speed and the slope of the film characteristic curve are affected. The phenomenon re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26a025e7fdeaf7efd74195136543d5cd
https://pubmed.ncbi.nlm.nih.gov/7465849
https://pubmed.ncbi.nlm.nih.gov/7465849
Autor:
M P Anderson, J B Kruger, Robert J. Jennings, L. W. Grossman, S J Lukes, C P Warr, Robert F. Wagner
Publikováno v:
Physics in medicine and biology. 31(9)
An analysis of noise was performed on scintillation camera images. The analysis was performed on sets of field floods, uniform exposures over the field of view, in such a way that stochastic and non-stochastic effects were separable. Stochastic noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16b23eeebbd9105fd3f4873e4d13c9e9
https://pubmed.ncbi.nlm.nih.gov/3774876
https://pubmed.ncbi.nlm.nih.gov/3774876