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pro vyhledávání: '"J. B. Khujaniyazov"'
Autor:
A. S. Rysbaev, S. U. Irgashev, A. S. Kasimov, D. Sh. Juraeva, J. B. Khujaniyazov, M. I. Khudoyberdieva
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 4, Iss 1, Pp 50-60 (2021)
The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nan
Externí odkaz:
https://doaj.org/article/23bc6ed49faa4a2c8750aef82deb0b81
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:994-999
A method for additional purification of the surface of single crystals of semiconductors is developed, which consists in the preliminary cleaning of samples by thermal heating in combination or without ion etching in ultrahigh vacuum, followed by imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54a84a43cca177a1108ef6eda0a66a85
https://doi.org/10.1134/s1027451017050135
https://doi.org/10.1134/s1027451017050135