Výsledky vyhledávání

A wafer level reliability method for short-loop processing

Autor: J.P. Dom, J. B. Duluc, N. Milet, Thomas Zimmer

Publikováno v: Microelectronics Reliability. 36:1859-1862

This paper presents a new method to isolate process steps causing performance spread of analogue or digital circuits. It is based on the analysis of process control (PC) parameters and can be directly applied to parametric on-wafer test. The suitabil

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc9d5e1eb49923c07e40a3c5d7e78e72
https://doi.org/10.1016/0026-2714(96)00215-6

Zobrazit plný text záznamu

A new WLR method based on model parameter analysis

Autor: N. Milet, J. B. Duluc, Thomas Zimmer, J.P. Dom

Publikováno v: IEEE 1995 International Integrated Reliability Workshop. Final Report.

An approach which identifies key disturbances which cause bipolar model parametric variations and correlation is presented. Model parameters, expressed as a function of technological data, are analyzed through a straightforward correlation study. Com

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4d40b7b0e105910758d7c2a7f60274f8
https://doi.org/10.1109/irws.1995.493596

Zobrazit plný text záznamu

BJT avalanche breakdown voltage improvement by introduction of a floating P-layer in the epitaxial collector region

Autor: J. B. Duluc, M. Ndoye, Jean Paul Dom, Noëlle Lewis, Helene Fremont, Thomas Zimmer

Publikováno v: in Proc. SPIE 98
Symposium on Microelectronic Facturing
Symposium on Microelectronic Facturing, Sep 1998, Santa Clara, United States. pp._

This paper describes a new method to improve the base- collector breakdown voltage of high frequency NPN bipolar transistor. It consists of introducing a suitable P floating region in the N collector by ion implantation or by molecular beam epitaxy.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc29c2763212d13750f2b6d636870de3
https://hal.archives-ouvertes.fr/hal-00189380

Zobrazit plný text záznamu

Determination of critical process steps for enhanced yield improvement

Autor: Thomas Zimmer, J. B. Duluc, Jean Paul Dom, Noëlle Lewis

Publikováno v: SPIE Proceedings.

This paper presents a new method to isolate process steps causing performance spread of analogue or digital circuits. It is based on the analysis of process control or device parameters, sampled over one or more wafers of one or more lots. The analys

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::10609236fb1e7a7dcb890b2eeb787822
https://doi.org/10.1117/12.250852

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání