Zobrazeno 1 - 10
of 162
pro vyhledávání: '"J. B. Boyce"'
Publikováno v:
Journal of Non-Crystalline Solids. :731-735
Pulsed excimer-laser processing of amorphous silicon on glass substrates enables the fabrication of high-quality polycrystalline silicon (poly-Si) thin-film transistors. Here we describe the fabrication and testing of prototype imagers fabricated in
Autor:
K. Van Schuylenbergh, L. Melekhov, P. Nylen, Kanai S. Shah, J. B. Boyce, Steve E. Ready, Robert Street, Haim Hermon, Jackson Ho
Publikováno v:
Journal of Applied Physics. 91:3345-3355
The factors determining the x-ray sensitivity of HgI2 and PbI2 as direct detector materials for large area matrix addressed x-ray image sensors are described, along with a model to explain their different properties. The imaging studies are made on t
Autor:
R. A. Street, J. B. Boyce, R. T. Fulks, JengPing Lu, Y. Wang, Ping Mei, R. Lau, K. Van Schuylenbergh, Jackson Ho
Publikováno v:
Thin Solid Films. 383:137-142
Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows for the fabrication of high-quality polysilicon materials and thin-film transistors (TFTs). Under optimized processing conditions, these polysilicon TFTs have h
Autor:
Robert Street, Jackson Ho, Ping Mei, Y. Wang, R. T. Fulks, J. P. Lu, J. B. Boyce, Jeffrey T. Rahn
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1823-1829
Pulsed excimer laser annealing (ELA) has become an important technology by which to produce high performance thin film transistors (TFTs) for large area electronics. The applications of these advanced TFTs in flat-panel displays and flat-panel imager
Publikováno v:
Journal of Non-Crystalline Solids. :1294-1298
Laser processing allows the fabrication of self-aligned amorphous Si thin film transistors (a-Si:H TFTs). These devices have much smaller parasitic capacitance between gates and source/drain contacts and can have much shorter channel lengths compared
Publikováno v:
Journal of Non-Crystalline Solids. :1252-1259
Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows the creation of new materials and devices. In this paper, we review (1) fabrication of polysilicon thin film transistors (TFTs) on glass substrates, (2) integra
Publikováno v:
Journal of Non-Crystalline Solids. :1270-1273
In this work we have investigated the use of low temperature amorphous silicon as the channel material for laser crystallized polysilicon thin film transistors (TFTs). The 50 nm films were deposited by plasma enhanced chemical vapor deposition (PECVD
Autor:
G. Brorsson, E. D. Bauer, J. B. Boyce, Frank Bridges, Tord Claeson, Corwin H. Booth, Yuri Suzuki
Publikováno v:
Physical Review B. 54:13352-13360
We have studied the local structure around Co in ${\mathrm{YBa}}_{2}$(${\mathrm{Cu}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Co}}_{\mathit{x}}$${)}_{3}$${\mathrm{O}}_{7\mathrm{\ensuremath{-}}\mathrm{\ensuremath{\delta}}}$ c-axis oriented thin
Autor:
J. B. Boyce, Tord Claeson, Ruixing Liang, Frank Bridges, D. A. Bonn, Bruce M. Lairson, Corwin H. Booth
Publikováno v:
Physical Review B. 54:9542-9554
We have performed fluorescence x-ray-absorption fine-structure (XAFS) measurements from 20--200 K on a 5000-\AA{} c-axis film of ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7\mathrm{\ensuremath{-}}\mathrm{\ensuremath{\delta}}}$ (YBCO) on Mg
Publikováno v:
Superlattices and Microstructures. 19:313-325
Many highTcsystems exhibit structural distortions or anomalies, some of which correlate withTc. We present our results for three such systems and discuss them in the context of providing any evidence for coupling of the lattice to the superconducting