Zobrazeno 1 - 10
of 214
pro vyhledávání: '"J. Auleytner"'
Publikováno v:
Journal of Alloys and Compounds. 382:146-152
A slab formed sample cut out from low doped Czochralski-grown silicon crystal was implanted with 117 MeV (3 MeV/nucleon) Ar ions to the dose 5 × 10 14 cm −2 and thermally annealed at 400 and 700 °C. The crystal was characterized with a number of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::721bc92442a46c7536a233c53f377f0e
https://doi.org/10.1016/j.jallcom.2004.05.026
https://doi.org/10.1016/j.jallcom.2004.05.026
Autor:
B. Kozankiewicz, D. Żymierska, A. Stonert, J. Auleytner, L. Nowicki, Adam Barcz, Dorota Klinger
Publikováno v:
The European Physical Journal Applied Physics. 27:149-153
The influence of the laser annealing on the defect structure of the near-surface layer of silicon crystal implanted with 40 keV Ge ions is reported. Evolution of defect structure during nanosecond pulse laser annealing is characterised by means of se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a586f0367a3cd72df140604da91dceb9
https://doi.org/10.1051/epjap:2004133
https://doi.org/10.1051/epjap:2004133
Publikováno v:
Journal of Applied Physics. 95:2331-2336
A very disturbed near-surface layer was formed by Sn-ion implantation in a Si single crystal. For crystal lattice reconstruction of this layer and for change of the dopant distribution pulsed laser annealing was applied. In order to determine the opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e092471b37f68b1d10e33db7cb226304
https://doi.org/10.1063/1.1643781
https://doi.org/10.1063/1.1643781
Publikováno v:
Journal of Alloys and Compounds. 362:265-268
In the present paper the results of investigations of the recrystallisation process in amorphous Ge near-surface layers induced by laser annealing are reported. Amorphised layers were created by implantation of Ge single crystal with 150 keV Sn ions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b6be736b09cf7c754e7ce197167e88
https://doi.org/10.1016/s0925-8388(03)00596-6
https://doi.org/10.1016/s0925-8388(03)00596-6
Publikováno v:
Journal of Alloys and Compounds. 362:248-253
The paper is a study of the microstructure of as grown semiconducting and semi-insulating GaAs crystals, as well as of fine structural changes induced in both materials by the implantation with a 5×1014 cm−2 dose of 3 MeV/amu nitrogen ions. X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::465800eaabecdf5ef1db8f2288cff58e
https://doi.org/10.1016/s0925-8388(03)00593-0
https://doi.org/10.1016/s0925-8388(03)00593-0
Publikováno v:
Journal of Alloys and Compounds. 362:282-286
A Si single crystal was implanted with a 5·10 15 cm −2 dose of 80 keV Si ions. We report the results of experimental and theoretical investigations of the structural changes induced by ultraviolet laser pulse in this crystal. The structural change
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1614897b9d077be4df938112512decaa
https://doi.org/10.1016/s0925-8388(03)00599-1
https://doi.org/10.1016/s0925-8388(03)00599-1
Publikováno v:
Journal of Physics D: Applied Physics. 36:A148-A152
A reciprocal space map recorded by means of a high-resolution diffractometer is a function of two angular variables: ω and 2θ defined as angular position of the studied crystal and position of an analyser, respectively. For comparative investigatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95ff8375134c8ff1339f36dd47ca9d7d
https://doi.org/10.1088/0022-3727/36/10a/330
https://doi.org/10.1088/0022-3727/36/10a/330
Publikováno v:
Acta Physica Polonica A. 102:289-294
A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence X-ray reflectometry, are used for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935bf83ed928ac3481b66dbf4306c2cd
https://doi.org/10.12693/aphyspola.102.289
https://doi.org/10.12693/aphyspola.102.289
Publikováno v:
Acta Physica Polonica A. 101:743-750
The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5 x 10 1 4 ions cm - 2 dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discusse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b99f217c1f0185656a0a0434d3bd140
https://doi.org/10.12693/aphyspola.101.743
https://doi.org/10.12693/aphyspola.101.743
Autor:
Dorota Klinger, A. Stonert, D. Żymierska, L. Nowicki, M. Lefeld-Sosnowska, J. Auleytner, S. Kwiatkowski
Publikováno v:
Journal of Alloys and Compounds. 328:242-247
The study of extended defects structure induced by the pulsed nanosecond radiation of an excimer laser with different energy density in Si single crystal implanted with Ge ions. Numerical calculations were done to determine the optimal value of the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75452ea0b36d703f35f62a583cb412b2
https://doi.org/10.1016/s0925-8388(01)01302-0
https://doi.org/10.1016/s0925-8388(01)01302-0