Zobrazeno 1 - 10
of 137
pro vyhledávání: '"J. Auersperg"'
Publikováno v:
Microelectronics Reliability. 64:665-668
Silicon based pressure sensors often take advantage of piezo-resistive gages which are normally embedded by multiple silicon oxide and silicon nitride layers where gold lines form a Wheatstone bridge. As a result of manufacturing – stepwise deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23038865d15cf4494fc999ceeb25780d
https://doi.org/10.1016/j.microrel.2016.07.084
https://doi.org/10.1016/j.microrel.2016.07.084
Publikováno v:
2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Continuous downsizing and integration of various electrical features in micro-electric devices go along with an increase of electrical interconnections e.g. copper vias (vertical interconnect access) in BEoL-layers (back end of line) and through Sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1cf72ba38657fb711195f9dfe5cd68c
https://doi.org/10.1109/eurosime.2018.8369880
https://doi.org/10.1109/eurosime.2018.8369880
Silicon based pressure sensors often take advantage of piezo-resistive gages which are normally embedded by multiple silicon oxide and silicon nitride layers where gold lines form a Wheatstone bridge (Meti et al., 2016; Bae et al., 2004 [ 2 ]). Becau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5eeb1b89dba8b29a89614ee39eeaeb9f
https://publica.fraunhofer.de/handle/publica/255802
https://publica.fraunhofer.de/handle/publica/255802
Publikováno v:
2017 IEEE 19th Electronics Packaging Technology Conference (EPTC).
The mechanical characterization of copper through silicon vias (TSV) is not feasible by means of classical material characterization methods like tensile testing due to the small size of the vias. Instead, instrumented nanoindentation is an appropria
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c52c915ad6a8d3a0b0540a37c698c16
https://doi.org/10.1109/eptc.2017.8277470
https://doi.org/10.1109/eptc.2017.8277470
Publikováno v:
2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Silicon based pressure sensors often take advantage of piezo-resistive gages which are normally embedded by multiple silicon oxide and silicon nitride layers where gold lines form a Wheatstone bridge. As a result of manufacturing - stepwise depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::778f44aabc98217e2d114c489297fd80
https://doi.org/10.1109/eurosime.2017.7926235
https://doi.org/10.1109/eurosime.2017.7926235
Autor:
Parisa Bayat, Dietrich R. T. Zahn, Raul D. Rodriguez, Sven Rzepka, J. Auersperg, Ellen Auerswald, Dietmar Vogel, Bernd Michel
Publikováno v:
Microelectronics Reliability. 54:1963-1968
Knowledge and control of local stress development in Back-End-of-Line (BEoL) stacks and nearby Through Silicon Vias (TSVs) in advanced 3D integrated devices is a key to their thermo-mechanical reliability. The paper presents a combined simulation/mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b04610193883b90f3dd426acbf6e3a51
https://doi.org/10.1016/j.microrel.2014.07.098
https://doi.org/10.1016/j.microrel.2014.07.098
Publikováno v:
Microelectronics Reliability. 54:1223-1227
3D-integration becomes more and more an important issue for advanced LED packaging solutions as it is a great challenge for the thermo-mechanical reliability to remove heat from LEDs to the environment by heat spreading or specialized cooling technol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::929aa4c11651e8f9d606b6c8d58051b5
https://doi.org/10.1016/j.microrel.2014.02.018
https://doi.org/10.1016/j.microrel.2014.02.018
Autor:
Reinhard Pufall, Georg M. Reuther, Patrick W. Kudella, J. Albrecht, Sven Rzepka, J. Auersperg, J. Brueckner
Publikováno v:
2016 IEEE 18th Electronics Packaging Technology Conference (EPTC).
Wire bonding as well as wafer probing can lead to oxide layer cracking in Backend of Line (BEOL) Bond Pad Stacks. This, along with metal migration into formed cracks, may lead to electrical failures. Mechanical loading conditions comparable to those
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31d533bc909cd14818e639ed801d72c6
https://doi.org/10.1109/eptc.2016.7861577
https://doi.org/10.1109/eptc.2016.7861577
Autor:
Georg M. Reuther, J. Brueckner, Reinhard Pufall, J. Albrecht, Sven Rzepka, J Auersperg, Patrick W. Kudella
Publikováno v:
2016 6th Electronic System-Integration Technology Conference (ESTC).
We have presented an advanced FEM simulation model that is able to map the scenario of indentation of a diamond tip into a thin brittle SiN x :H film deposited on a Si substrate. Our 2D axisymmetric and 3D quarter and half models are able to reproduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31eee6e72b2effd07a462e0baab5416d
https://doi.org/10.1109/estc.2016.7764677
https://doi.org/10.1109/estc.2016.7764677
Publikováno v:
2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Wire bonding as well as wafer probing can lead to oxide layer cracking. In combination with metal migration electrical failures may occur. Loading conditions comparable to the wire bonding process can be achieved using a nanoindenter. In this work a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::150a211d268e6e3da7c88d9329dba957
https://doi.org/10.1109/eurosime.2016.7463404
https://doi.org/10.1109/eurosime.2016.7463404