Zobrazeno 1 - 10
of 28
pro vyhledávání: '"J. Alverbro"'
Autor:
M. Pozzi, M. Fawakhiri, W. Diel, Eric Costard, Shagufta Naureen, J. Alverbro, D. Evans, L. Höglund, S. Bae
Publikováno v:
Infrared Technology and Applications XLIV.
Lately IRnova's research activities have been focused on the development of its next generation Type II Superlattice (T2SL) and Quantum Well Infrared Photodetector (QWIP) based infrared focal plane arrays (FPA) and Integrated Detector Dewar Cooler As
Autor:
Eric Costard, Fredrik Sjöström, Carl Asplund, S. Sehlin, D. Evans, S. Becanovic, Himanshu Kataria, Linda Höglund, J. Alverbro, P. Tinghag, Sergiy Smuk, A. Lindberg
Publikováno v:
Infrared Technology and Applications XLIII.
Continuing with its legacy of producing high performance infrared detectors, IRnova introduces its high resolution LWIR IDDCA (Integrated Detector Dewar Cooler assembly) based on QWIP (quantum well infrared photodetector) technology. The Focal Plane
Autor:
Val O'Shea, M. Östlund, Z. Fakoor-Biniaz, J. Andersson, D. Meikle, J. Alverbro, Kevin M. Smith, H. Martijn, R. Irsigler, Ch. Fröjdh, P. Helander
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 460:67-71
We report on gain and offset corrections for GaAs X-ray pixel detectors, which were hybridised to silicon CMOS readout integrated circuits (ROICs). The whole detector array contains 320×240 square-shaped pixels with a pitch of 38 μm. The GaAs pixel
Autor:
Kevin M. Smith, P. Helander, R. Irsigler, Ch. Fröjdh, J. Alverbro, S. Manolopoulos, Val O'Shea, J. Borglind, J. Andersson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 434:24-29
320×240 pixels GaAs Schottky barrier detector arrays were fabricated, hybridized to silicon readout circuits, and subsequently evaluated. The detector chip was based on semi-insulating LEC GaAs material. The square shaped pixel detector elements wer
Autor:
Kevin M. Smith, S. Manolopoulos, J. Andersson, P. Helander, J. Borglind, J. Alverbro, H. Martijn, Christer Fröjdh, R. Irsigler, Val O'Shea
Publikováno v:
IEEE Transactions on Nuclear Science. 46:507-512
We present room temperature measurements on 200 /spl mu/m thick GaAs pixel detectors, which were hybridized to silicon readout circuits. The whole detector array contains 320/spl times/240 square shaped pixel with a pitch of 38 /spl mu/m and is based
Autor:
J. Alverbro, P. Helander, H. Martijn, Val O'Shea, Kevin M. Smith, Christer Fröjdh, J. Borglind, S. Manolopoulos, J. Andersson, R. Irsigler
Publikováno v:
1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255).
Publikováno v:
Conference on Lasers and Electro-Optics Europe.
Long wavelength (8-10 µm) quantum well infrared photodetectors (QWIPs) based on intersubband transitions in n-doped AlGaAs/GaAs quantum wells (QW) are known to exhibit high detectivities D * = I 1010 -9-1010 cm Hz1/2 W1. Due to the well established
Autor:
P J Tolf, J. Alverbro, Y Eriksson, M. Östlund, H. Martijn, Z. Fakoor-Biniaz, U Halldin, P. Helander, J. Borglind, J. Andersson
Publikováno v:
Physica Scripta. :138
Infrared pixel detectors sensitive to radiation in the wavelength range 8 to 9 µm have been fabricated and evaluated. The detectors have 320 × 240 pixels and consist of two parts. One is the infrared sensitive part with a quantum well structure bas
Conference
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Conference
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