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Akademický článek

Finite impulse response design based on two-level transpose Vedic multiplier for medical image noise reduction

Autor: Joghee Prasad, Arun Sekar Rajasekaran, J. Ajayan, Kambatty Bojan Gurumoorthy

Publikováno v: ETRI Journal, Vol 46, Iss 4, Pp 619-632 (2024)

Medical signal processing requires noise and interference-free inputs for precise segregation and classification operations. However, sensing and transmitting wireless media/devices generate noise that results in signal tampering in feature extractio

Externí odkaz: https://doaj.org/article/b6318e3ca7144ff188f22cfd725737b4

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Akademický článek

LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications

Autor: B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, Amit Krishna Dwivedi

Publikováno v: Journal of Science: Advanced Materials and Devices, Vol 9, Iss 4, Pp 100795- (2024)

High-performance LG = 50 nm graded double-channel (GDC)-HEMT featuring AlN top barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated. Two quantum wells are formed in the AlN-GaN-graded AlGaN-GaN multilayer structure de

Externí odkaz: https://doaj.org/article/bd58bf1244834f938425c913088fa23b

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Akademický článek

A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers

Autor: B. Mounika, Asisa Kumar Panigrahy, J. Ajayan, N. Khadar Basha, Vakkalakula Bharath Sreenivasulu, M. Durga Prakash, Sandip Bhattacharya, D. Nirmal

Publikováno v: IEEE Access, Vol 12, Pp 131906-131914 (2024)

In this work, we report the RF/DC performance of novel AlN/GaN/Graded-AlGaN/GaN double-channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the performance between conventional AlGaN/GaN/Graded-AlGaN/GaN double-channel HEMT

Externí odkaz: https://doaj.org/article/ef87a7045fcc497bad75a273733472dd

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Akademický článek

Performance Comparison of Nanosheet FET, CombFET, and TreeFET: Device and Circuit Perspective

Autor: Neelam Aruna Kumari, V. Bharath Sreenivasulu, Vikas Vijayvargiya, Abhishek Kumar Upadhyay, J. Ajayan, M. Uma

Publikováno v: IEEE Access, Vol 12, Pp 9563-9571 (2024)

In this article, the comparison of nanosheet (NS) FET, CombFET, and TreeFETs at advanced technology nodes is performed. Initially, the DC metrics like $I_{\mathrm {ON}}$ , $I_{\mathrm {ON}}/I_{\mathrm {OFF}}$ and $I_{\mathrm {D}} - V_{\mathrm {DS}}$

Externí odkaz: https://doaj.org/article/09859af2384d427496c9933307c33226

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