Zobrazeno 1 - 9
of 9
pro vyhledávání: '"J. A. Solovjov"'
Autor:
A. D. Yunik, J. A. Solovjov
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 8, Pp 14-20 (2023)
Effect of rapid thermal annealing conditions on the specific resistance of the ohmic contacts of Ti/Al/Ni/Au metallization with layer thicknesses of 20/120/40/40 nm to the GaN/AlGaN heterostructure with a two-dimensional electron gas on a sapphire su
Externí odkaz:
https://doaj.org/article/44d0a5572d064a3aad7af5625fd28834
Autor:
V. A. Pilipenko, V. A. Solodukha, N. S. Kovalchuk, J. A. Solovjov, D. V. Shestovski, D. V. Zhyhulin
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 7, Pp 20-27 (2022)
This work is devoted to establishing the effect of using rapid thermal processing (RTP) method (450 °C, 7 s) to form an ohmic contact between two layers of aluminum metallization on the electrical parameters and reliability of integrated circuits. T
Externí odkaz:
https://doaj.org/article/44bd0ba977f74bdb9f1123a68e077dce
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 3, Pp 13-19 (2022)
Effect of rapid thermal annealing temperature on the electrophysical properties of the ohmic contact of Ti/Al/Ni metallization with layer thicknesses of 20/120/40 nm to the GaN/AlGaN heterostructure with a two-dimensional electron gas on a sapphire s
Externí odkaz:
https://doaj.org/article/45fe69ca206b455882d47aeeacb3f1c0
Autor:
J. A. Solovjov
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 6, Pp 59-65 (2021)
Present work is devoted to the development of a mathematical model for the forward current-voltage characteristic of Schottky diodes with a metal – oxide – semiconductor (MOS) trench structure, which takes into account the accumulation of the mai
Externí odkaz:
https://doaj.org/article/87512ddd6042482680ae950a0c3ec8c2
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 7, Pp 79-86 (2020)
The present work is devoted to determination of the dependence of the heating temperature of the silicon wafer on the lamps power and the heating time during rapid thermal processing using “UBTO 1801” unit by irradiating the wafer backside with a
Externí odkaz:
https://doaj.org/article/f78ae81f23904dd6bd78dae168300efd
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 4, Pp 71-79 (2020)
The formation of chromium disilicide layers on n-type single crystal silicon substrates (111) during rapid thermal annealing in heat balance mode by the methods of Rutherford backscattering, X-ray diffraction and transmission electron microscopy of c
Externí odkaz:
https://doaj.org/article/6aa0a3a4d26c4b00ae3ae82c79adac69
Autor:
J. A. Solovjov, V. A. Pilipenko
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7-8, Pp 157-164 (2019)
Present paper is devoted the determination of the effect of the temperature of the process of rapid thermal treatment of chromium films on n-type conductivity silicon on their resistivity and contact properties of the interface. Chromium films of abo
Externí odkaz:
https://doaj.org/article/f3ed76aad50f48749d11882dc7260099
Autor:
V. A. Saladukha, V. S. Turtsevitch, J. A. Solovjov, I. I. Rubtsevitch, A. F. Kerentsev, A. A. Dovzhenko, I. V. Chirko
Publikováno v:
Pribory i Metody Izmerenij, Vol 0, Iss 1, Pp 103-107 (2015)
High reliability of ASICs in metal-ceramic packages at the stage of manufacturing is achieved as a result of minimization of moisture content inside the package and due to continuous measurements of parameters of the encapsulation environment. It is
Externí odkaz:
https://doaj.org/article/cdcd1878acf6416281389e4e656e12c9
Publikováno v:
Doklady BGUIR. 20:13-19