Zobrazeno 1 - 10
of 12
pro vyhledávání: '"J. A. Slinkman"'
Autor:
H. G. Robinson, J. A. Slinkman, J. K. Listebarger, Mark E. Law, Kevin S. Jones, T. O. Sedgwick, D. D. Sieloff
Publikováno v:
Journal of Applied Physics. 78:2298-2302
A boron doped epilayer was used to investigate the interaction between end of range dislocation loops (formed from Ge+ implantation) and excess point defects generated from a low dose 1014/cm2 B+ implant into silicon. The boron doping spike was grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636ed9d763f0cee7484927b24b7439e1
https://doi.org/10.1063/1.360147
https://doi.org/10.1063/1.360147
Autor:
J. Liu, B. Herner, Kevin S. Jones, H. Park, J. K. Listebarger, Mark E. Law, D. D. Sieloff, Jia’er Chen, J. A. Slinkman, H. G. Robinson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:196-201
Studies of the interactions between point defects introduced during semiconductor processing and dislocation loops are reviewed. The processing steps studied include oxidation, ion implantation and silicidation. By using doped marker layers it is sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de07f4ab2242fcff14a74c86c68c22ff
https://doi.org/10.1016/0168-583x(94)00482-x
https://doi.org/10.1016/0168-583x(94)00482-x
Publikováno v:
Physical Review B. 50:15197-15209
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e06fa4864894e4506687f68ce618cfe
https://doi.org/10.1103/physrevb.50.15197
https://doi.org/10.1103/physrevb.50.15197
Publikováno v:
Physical Review B. 48:9162-9165
We have calculated spin-split electron wave functions and eigenenergies in a wide parabolic quantum well. Our calculation incorporates scattering, a range of many-body approximations, and an applied perpendicular magnetic field. We find unexpected be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16dbede2d550c3ebf3d279e02ee29731
https://doi.org/10.1103/physrevb.48.9162
https://doi.org/10.1103/physrevb.48.9162
Publikováno v:
Journal of Applied Physics. 73:4815-4819
Type‐II (end of range) defects, produced by Ge+ implantation, were investigated as possible ‘‘detectors’’ for quantifying nonequilibrium interstitial concentrations following B+ implantation into silicon. The type‐II damage was created wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f5b7d396301a4695b7b51a26db71d5b
https://doi.org/10.1063/1.353847
https://doi.org/10.1063/1.353847
Publikováno v:
IBM Journal of Research and Development. 36:158-182
Many of the processes used in the fabrication of silicon integrated circuits lead to the development of stress in the silicon substrate. Given enough stress, the substrate will yield by generating dislocations. We examine the formation of stress-indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1ba3f7187d9e6e2241d1adba9b899b9
https://doi.org/10.1147/rd.362.0158
https://doi.org/10.1147/rd.362.0158
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
A point defect based model for the stress effects on dopant diffusion is presented. Binding energies and diffusivities of dopant-defect pairs under pressure are modeled and encapsulated into diffusion equations. Boron segregation around dislocation l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ba84170d7c9614bbff733373fc59c7b
https://doi.org/10.1109/iedm.1993.347347
https://doi.org/10.1109/iedm.1993.347347
Publikováno v:
Physical review. B, Condensed matter. 46(12)
We have calculated self-consistent electron wave functions and eigenenergies in a wide parabolic quantum well subject to a perpendicular magnetic field. The spectra from these calculations naturally divide into three regions of magnetic-field strengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c646ff18bae09278743d316e1a1882e3
https://pubmed.ncbi.nlm.nih.gov/10002498
https://pubmed.ncbi.nlm.nih.gov/10002498
Publikováno v:
Physical review. B, Condensed matter. 45(19)
Recently, Kunze investigated electric subbands in the inversion layer on degenerate p-type InAs by means of Zener tunneling. He inferred energy separations between low-lying subbands in a sample with bulk acceptor concentration in the ${10}^{17}$ ${\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd5d10583bc69d8974ede2502eb16972
https://pubmed.ncbi.nlm.nih.gov/10001063
https://pubmed.ncbi.nlm.nih.gov/10001063
Publikováno v:
Physical review. B, Condensed matter. 41(1)
An analytic formula is described for fitting the magnetic field B(z) or vector potential A(z) in pure superconducting aluminum with specular scattering of electrons at the surface. The error in the fit to the vector potential as predicted by the BCS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::052fa9ad560b2deaca0e28b9d008c3a4
https://pubmed.ncbi.nlm.nih.gov/9992813
https://pubmed.ncbi.nlm.nih.gov/9992813