Zobrazeno 1 - 10
of 20
pro vyhledávání: '"J. A. Robo"'
Autor:
J. A. Robo, Eric Costard, Yves Gourdel, Julien Brault, Jean-Luc Reverchon, J. P. Truffer, Jean-Yves Duboz
Publikováno v:
International Conference on Space Optics — ICSO 2008.
The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. Such AlGaN based camera presents an intrinsic spectral selectivity and an extremely low dark current at room temperature. Firstly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff20901dde7b78fa5d78965378354794
https://doi.org/10.1117/12.2308214
https://doi.org/10.1117/12.2308214
Autor:
Odile Huet, N. Brière de l'Isle, Eric Costard, J. A. Robo, Xavier Marcadet, H. Facoetti, J. P. Truffer, Lydie Dua, P. Bois, Alexandru Nedelcu
Publikováno v:
Infrared Physics & Technology. 52:353-360
Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related III–V compounds, at the Alcatel-Thales-III-V Lab (formerly part of THALES Research and Technology Laboratory). In the past research
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c7e63b7723ea65e61fb0bd57f554484
https://doi.org/10.1016/j.infrared.2009.05.035
https://doi.org/10.1016/j.infrared.2009.05.035
Autor:
Jean-Yves Duboz, Y. Gourdel, J. P. Truffer, Eric Frayssinet, J. L. Reverchon, Julien Brault, Shailendra Bansropun, Eric Costard, K. Robin, J. A. Robo
Publikováno v:
EAS Publications Series. 37:207-215
The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. A camera based on such a material presents an extremely low dark current at room temperature. It can compete with technologies ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b7b350b7488307e7a2b5210e49905bf
https://doi.org/10.1051/eas/0937026
https://doi.org/10.1051/eas/0937026
Autor:
Odile Huet, A. Rouvie, J. A. Robo, Jean-Luc Reverchon, Toufiq Bria, Anis Djedidi, J. P. Truffer, Jean Decobert, Mauricio P. Pires, Eric Costard
Publikováno v:
SPIE Proceedings.
SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e781ccf038173550148f87bfd90fd41d
https://doi.org/10.1117/12.921134
https://doi.org/10.1117/12.921134
Autor:
Pierre Castelein, J. A. Robo, Eric De Borniol, Jean-Luc Reverchon, A. Rouvie, Fabrice Guellec
Publikováno v:
SPIE Proceedings.
Through collaboration between III-V Lab and CEA-Leti, a 640 x 512 InGaAs image sensor with 15 mm pixel pitch has been developed. Based on a thinned substrate, the photodiode array detects the light from the visible to the near infrared wavelength (0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68966390221b219b4f79b6df540e2dde
https://doi.org/10.1117/12.921086
https://doi.org/10.1117/12.921086
Autor:
J. P. Truffer, Jean Decobert, Jean-Luc Reverchon, J. A. Robo, Odile Huet, P. Bois, A. Rouvie, Eric Costard
Publikováno v:
SPIE Proceedings.
Thanks to the high transmission coefficient of short infrared wavelengths in the atmosphere and specific contrasts, SWIR imaging is an attractive technology for space applications such as astronomical or earth observation. Detection module must demon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3e80ab7617f257c14706fe040f7de4a
https://doi.org/10.1117/12.899180
https://doi.org/10.1117/12.899180
Autor:
V. Noguier, Yang Ni, A. Rouvie, O. Huet, J. Decobert, J. A. Robo, Jean-Luc Reverchon, Y. M. Zhu, N. Lagay, B. Arion
SWIR image sensors based on p-i-n photodiodes arrays present a tremendous interest in applications often requiring a high intra-scene dynamics. This paper describes a single-chip InGaAs SWIR camera with more than 120 dB intrinsic operational dynamic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8257cfd3cdba766e19762d7a8e51733
Autor:
J. P. Truffer, J. A. Robo, M. Idir, Jean-Luc Reverchon, Eric Frayssinet, Shailendra Bansropun, Jean-Yves Duboz, Eric Costard, Fabrice Semond, Julien Brault
Publikováno v:
SPIE Proceedings.
We present several prototypes to extend the range of AlGaN focal plane arrays from near UV to deep UV range (200 nm - 4 nm). Arrays include 320x256 pixels with a pitch of 30 μm and are based on Schottky photodiodes. AlGaN is grown on a silicon subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af6d32a9d309e502f1fd1f7af3b05419
https://doi.org/10.1117/12.830287
https://doi.org/10.1117/12.830287
Publikováno v:
SPIE Proceedings.
Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related III-V compounds, at the Alcatel-Thales-III-V Lab (formerly part of THALES Research and Technology Laboratory). In the past researcher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0b3c9ffbb8e53d031febc26e04ff586
https://doi.org/10.1117/12.820470
https://doi.org/10.1117/12.820470
Autor:
Idir Mourad, J. A. Robo, Jean-Luc Reverchon, Jean-Yves Duboz, Jean-Pascal Caumes, Julien Brault, J. P. Truffer
Publikováno v:
SPIE Proceedings.
The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. Such camera present an intrinsic spectral selectivity and an extremely low dark current at room temperature. It can compete with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eefc1e924adf96eecdcdbf1f3e7168fb
https://doi.org/10.1117/12.754794
https://doi.org/10.1117/12.754794