Zobrazeno 1 - 10
of 22
pro vyhledávání: '"J. A. Prybyla"'
Publikováno v:
Journal of The Electrochemical Society. 140:2695-2702
Growth of clean (
Publikováno v:
Physical Review Letters. 68:503-506
The laser-induced desorption of CO molecules from a Cu(111) surface is time resolved with 100-fsec resolution. We find the desorption reaction is completed in ≤ 325 fsec after the 100-fsec, 2-eV photon energy pump pulse. The only mechanism consiste
Publikováno v:
Applied Physics Letters. 76:164-166
In situ transmission electron microscopy experiments on electromigration in Al(0.5%Cu)/TiN interconnects show that the TiN barrier layer improves reliability not only by acting as a shunting layer, but also by dramatically influencing electromigratio
Publikováno v:
The Journal of Chemical Physics. 94:6274-6295
Low energy electron diffraction (LEED) and surface infrared spectroscopy (SIRS) have been used to investigate the phase diagram of the H/Mo(100) chemisorption system, for hydrogen coverages up to saturation in the temperature interval 100 K
Publikováno v:
Applied Physics Letters. 75:3790-3792
Crystallographic grain orientations at a large number of electromigration failure sites in Al(Cu) interconnects have been measured and compared to the grain orientations away from failure sites. Electron backscattered diffraction analysis reveals a p
Publikováno v:
Applied Physics Letters. 73:1083-1085
Real-time transmission electron microscopy (TEM) was used to directly examine the temperature dependence of electromigration-induced void and failure dynamics over the range 200–350 °C. The studies were done using submicron Al interconnects and a
Publikováno v:
Applied Physics Letters. 70:2541-2543
Investigations of the healing of electromigration-induced open-circuit failed submicron Al(0.5%Cu) interconnects were performed using in situ transmission electron microscopy (TEM). The samples consisted of 4000 A thick Al (0.5%Cu) patterned over a T
Publikováno v:
Applied Physics Letters. 69:2367-2369
Systematic studies of the influence of local microstructure on electromigration (EM) dynamics in submicron Al (0.5 wt % Cu) interconnects were performed using in situ transmission electron microscopy. This approach has allowed us to observe, in real
Publikováno v:
Applied Physics Letters. 68:2372-2374
The stress coefficient of resistivity (piezoresistance coefficient) of passivated submicron Al‐Cu lines was determined using a wafer‐bending technique. This coefficient is significant for the interpretation of early resistance changes in reliabil
The Effect of Cu Concentration and Distribution on the Lifetimes of Submicron, Bamboo Al(Cu) Runners
Publikováno v:
MRS Proceedings. 473
We have studied the effect of Cu concentration and initial distribution on the electromigration lifetimes of 0.3 – 0.8 μm wide, ≥ 99% bamboo Al interconnects. The mechanism by which Cu reduces electromigration in polygranular interconnects may n