Zobrazeno 1 - 3
of 3
pro vyhledávání: '"J. A. Novoa-Lopez"'
Autor:
H. Sanchez-Martin, Tomas Gonzalez, J. A. Novoa-Lopez, Ignacio Iniguez-de-la-Torre, Y. Lechaux, Javier Mateos, G. Paz-Martinez
Publikováno v:
GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname
instname
[EN]Planar Gunn diodes on In0.53Ga0.47 As with lengths between 2 and 5 μm have been fabricated and characterized in a temperature range of 10 to 300 K. Two different oscillation regimes are observed depending on temperature. At the higher values, th
Autor:
Javier Mateos, O. Garcia-Perez, Juan A. Delgado-Notario, Daniel Vaquero, Vito Clericò, J. A. Novoa-Lopez, Tomas Gonzalez, J. F. Millithaler, Ignacio Iniguez-de-la-Torre, H. Sanchez-Martin, Y. Lechaux
Publikováno v:
GREDOS. Repositorio Institucional de la Universidad de Salamanca
Universitat Politècnica de Catalunya (UPC)
GREDOS: Repositorio Institucional de la Universidad de Salamanca
Universidad de Salamanca (USAL)
Universitat Politècnica de Catalunya (UPC)
GREDOS: Repositorio Institucional de la Universidad de Salamanca
Universidad de Salamanca (USAL)
[EN]In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations at frequencies below 30 GHz have been fabricated and characterized. Different types of measurements were used to define a set of consistent methods f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd16c8a3405a2fbeb1d3c2b440ee57ed
http://hdl.handle.net/10366/144051
http://hdl.handle.net/10366/144051
Autor:
J. A. Novoa-Lopez, Susana Perez, V. Cierico, Enrique Diez, Beatriz G. Vasallo, Juan A. Delgado-Notario, Ignacio Iniguez-de-la-Torre, H. Sanchez-Martin, Tomas Gonzalez, Y. Lechaux, Javier Mateos
Publikováno v:
2018 12th Spanish Conference on Electron Devices (CDE)
2018 12th Spanish Conference on Electron Devices (CDE), Nov 2018, Salamanca, France. pp.1-4
2018 12th Spanish Conference on Electron Devices (CDE), Nov 2018, Salamanca, France. pp.1-4
In this work we report on the design, fabrication and characterization of Terahertz detectors based on the power handling properties of Gallium Nitride (GaN) and the Self Switching Diode (SSD) geometry. SSDs, featuring asymmetric channels defined by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be6caec0ec75500780393d8f196bd900
https://hal.archives-ouvertes.fr/hal-02115686
https://hal.archives-ouvertes.fr/hal-02115686