Zobrazeno 1 - 9
of 9
pro vyhledávání: '"J. A. Kittl"'
Publikováno v:
Applied Physics Letters. 56:2468-2470
We have studied the correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering. Epitaxial, c-axis oriented YBa2Cu3O7–delta films were grown bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87018e63fba8ae2982d2ba417a4b94e0
https://doi.org/10.1063/1.103258
https://doi.org/10.1063/1.103258
Autor:
S. Van Elshocht, C. Adelmann, S. Clima, G. Pourtois, T. Conard, A. Delabie, A. Franquet, P. Lehnen, J. Meersschaut, N. Menou, M. Popovici, O. Richard, T. Schram, X. P. Wang, A. Hardy, D. Dewulf, M. K. Van Bael, T. Blomberg, D. Pierreux, J. Swerts, J. W. Maes, D. J. Wouters, S. De Gendt, J. A. Kittl
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:209
Although the next generation high-k gate dielectrics has been defined for the 45nm complementary metal oxide semiconductor technology node, threshold voltage control and equivalent oxide thickness (EOT) scaling remain concerns for future devices. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5b31a0d19305b6aba3685801f941936
https://doi.org/10.1116/1.3025855
https://doi.org/10.1116/1.3025855
We have analyzed epitaxial, c-axis oriented YBa2Cu3O7–delta thin films grown in situ by sequential ion-beam sputtering on (100) SiTiO3 and (100) MgO substrates. X-ray diffraction studies showed the presence of both homogeneous and inhomogeneous lat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90069a40430866de80a60d4028ddc7fe
https://resolver.caltech.edu/CaltechAUTHORS:KITjap91
https://resolver.caltech.edu/CaltechAUTHORS:KITjap91
Autor:
H.Y. Yu, M.F. Li, A. Lauwers, J. A. Kittl, R. Singanamalla, A. Veloso, T. Hoffmann, K. De Meyer, M. Jurczak, P. Absil, S. Biesemans
Publikováno v:
2006 8th International Conference on Solid-State & Integrated Circuit Technology Proceedings; 2006, p404-407, 4p
Autor:
J. E. Testoni, Salvador Gil, D. E. DiGregorio, D. Abriola, A. O. Macchiavelli, A.M.J. Ferrero, A. Etchegoyen, A. J. Pacheco, J. A. Kittl, J. O. Fernández Niello, M. C. Etchegoyen
Publikováno v:
Physical Review C. 39:546-552
Angular distributions for elastic and inelastic scattering of $^{16}$O${+}^{144}$Sm have been measured at bombarding energies E=69.2 and 72.3 MeV. Excitation functions were measured between E=61 and 76.3 MeV at backward angles. The present elastic sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653f70228dd7c5e00749c1985ab72795
https://doi.org/10.1103/physrevc.39.546
https://doi.org/10.1103/physrevc.39.546
Autor:
J. O. Fernández Niello, A. J. Pacheco, M. C. Etchegoyen, A. Etchegoyen, J. E. Testoni, A.M.J. Ferrero, D. Abriola, J. A. Kittl, D. E. DiGregorio, Salvador Gil, A. O. Macchiavelli
Publikováno v:
Zeitschrift f�r Physik A Atomic Nuclei. 331:451-455
The production of nitrogen and carbon fragments in the reactions induced by16O on144Sm and154Sm targets was studied at two bombarding energies (65 MeV and 72 MeV) around the interaction barrier. The measured angular distributions exhibit the characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::261510a22a3e9eb11c66e1a6eb5c9b2e
https://doi.org/10.1007/bf01291903
https://doi.org/10.1007/bf01291903
Autor:
A. O. Macchiavelli, J. E. Testoni, A. Etchegoyen, A. J. Pacheco, Salvador Gil, J. O. Fernández Niello, D.E. Di Gregorio, A.M.J. Ferrero, J. A. Kittl, M. C. Etchegoyen, D. Abriola
Publikováno v:
Nuclear Physics A. 471:587-603
Recently measured scattering cross sections for the 16 O + 144 Sm system allow to extract a bare potential which is used in a global analysis of scattering, fusion and transfer experimental data for 16 O on different samarium isotopes at energies clo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e663dd9d671aa50a6e8d4ce2d8eaaf6
https://doi.org/10.1016/0375-9474(87)90101-1
https://doi.org/10.1016/0375-9474(87)90101-1
Autor:
J. E. Kittl, T. B. Massalski
Publikováno v:
Journal of Applied Physics. 33:242-243
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68a55f48caf3bddf478e67f00a8f092c
https://doi.org/10.1063/1.1728510
https://doi.org/10.1063/1.1728510
Autor:
Iuliana P Radu, B Govoreanu, S Mertens, X Shi, M Cantoro, M Schaekers, M Jurczak, S De Gendt, A Stesmans, J A Kittl, M Heyns, K Martens
Publikováno v:
Nanotechnology; 4/24/2015, Vol. 26 Issue 16, p1-1, 1p