Zobrazeno 1 - 10 of 118 pro vyhledávání: '"J. A. Eades"'
4
The Growth of a Migrant Community: The Yoruba in Northern Ghana
Autor: J. S. Eades
Publikováno v: Changing Social Structure in Ghana ISBN: 9780429489068
This chapter provides some of the background to the expulsions from Ghana in which the group most affected were Yorubas from Western Nigeria. The Yoruba trading in Tamale consisted of non-hierarchical independent small-scale trading units, and it con
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5bfadd0b523d87a94ef31c626a191e20
https://doi.org/10.4324/9780429489068-2
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5
Dimensions of Internationalization
Autor: J. S. Eades
Publikováno v: The Impact of Internationalization on Japanese Higher Education ISBN: 9789463001694
Since the 1980s, one of the most widely used terms in the formulation of Japanese educational policy has been kokusaika, usually translated as “internationalization.” In particular, institutions of higher education have increasingly had to take n
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::244adf2bbe5055d7a35b8dbf170241c7
https://doi.org/10.1007/978-94-6300-169-4_5
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6
On optimum illumination for channeling experiments
Autor: J. A. Eades
Publikováno v: Scanning. 16:97-100
In experiments in which channeling effects are important, it may be desirable simultaneously to maximize the current, minimize the area of the sample that is illuminated, and, in particular, minimize the divergence of the beam. The ability to meet th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::792dd4ebc100a05adf695012f78fc70d
https://doi.org/10.1002/sca.4950160206
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8
Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions
Autor: Hyungjun Kim, T. Spila, G. Glass, Joseph E Greene, J. A. Eades, Patrick Desjardins, N. Taylor
Publikováno v: Journal of Applied Physics. 85:501-511
Single crystal Si1−xGex(011) layers with x⩽0.35 have been grown on double-domain Si(011)“16×2” surfaces from Si2H6/Ge2H6 mixtures at temperatures Ts=400–950 °C. D2 temperature programmed desorption was used to show that the structure of t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4b21c32f7b1795d977f1451aecb05c8f
https://doi.org/10.1063/1.369481
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9
Analyses of HF/NH4F buffer-treated Si(111) surfaces using XPS, REM and SIMS
Autor: J. A. Eades, Y. Ma
Publikováno v: Applied Physics A Materials Science & Processing. 62:247-253
The effect of different cleaning procedures on Si(111) wafers has been studied. A three-step cleaning process was used. The first two steps (thermal oxidation followed by RCA cleaning) were common to all samples. The final step involved rinsing in on
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::63294435c868eefa70b8a3d7b3b34126
https://doi.org/10.1007/bf01575089
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