Zobrazeno 1 - 10
of 16
pro vyhledávání: '"J. A. Delgado Notario"'
Autor:
O. Castelló, Sofía M. López Baptista, K. Watanabe, T. Taniguchi, E. Diez, J. E. Velázquez-Pérez, Y. M. Meziani, J. M. Caridad, J. A. Delgado-Notario
Publikováno v:
Frontiers of Optoelectronics, Vol 17, Iss 1, Pp 1-11 (2024)
Abstract In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz appl
Externí odkaz:
https://doaj.org/article/130a1a7c85b94b91930873fb29b73e8d
Autor:
E. Abidi, A. Khan, J. A. Delgado-Notario, V. Clericó, J. Calvo-Gallego, T. Taniguchi, K. Watanabe, T. Otsuji, J. E. Velázquez, Y. M. Meziani
Publikováno v:
Nanomaterials, Vol 14, Iss 4, p 383 (2024)
An asymmetric dual-grating gate bilayer graphene-based field effect transistor (ADGG-GFET) with an integrated bowtie antenna was fabricated and its response as a Terahertz (THz) detector was experimentally investigated. The device was cooled down to
Externí odkaz:
https://doaj.org/article/cae406d4ba6b4a96a70e138bb38e0c61
Autor:
J. A. Delgado-Notario, V. Clericò, E. Diez, J. E. Velázquez-Pérez, T. Taniguchi, K. Watanabe, T. Otsuji, Y. M. Meziani
Publikováno v:
APL Photonics, Vol 5, Iss 6, Pp 066102-066102-8 (2020)
A graphene-based field-effect-transistor with asymmetric dual-grating gates was fabricated and characterized under excitation of terahertz radiation at two frequencies: 0.15 THz and 0.3 THz. The graphene sheet was encapsulated between two flakes of h
Externí odkaz:
https://doaj.org/article/81534aa23ce5451bba28a39fe004fb9d
Autor:
C. Bray, K. Maussang, C. Consejo, J. A. Delgado-Notario, S. Krishtopenko, I. Yahniuk, S. Gebert, S. Ruffenach, K. Dinar, E. Moench, J. Eroms, K. Indykiewicz, B. Jouault, J. Torres, Y. M. Meziani, W. Knap, A. Yurgens, S. D. Ganichev, F. Teppe
Publikováno v:
HAL
Graphene is a quantum spin Hall insulator with a 45 $\mu$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2de6916343a9ac6d1ed447e8e628fbea
https://hal.science/hal-03824955
https://hal.science/hal-03824955
Autor:
A. Rehman, J. A. Delgado-Notario, P. Sai, D. B. But, P. Prystawko, Y. Ivonyak, G. Cywinski, W. Knap, S. Rumyantsev
Publikováno v:
Applied Physics Letters. 121:213503
The current response to sub-terahertz radiation was studied experimentally over a wide range of temperatures for AlGaN/GaN and graphene transistors. It was found that the responsivity is enhanced at low temperatures by about an order of magnitude for
Autor:
J. A. Delgado Notario, J. E. Velazquez, Elham Javadi, Enrique Diez, Yahya Moubarak Meziani, Kristel Fobelets
Publikováno v:
Millimetre Wave and Terahertz Sensors and Technology X.
We investigated room temperature detection of terahertz radiation by using two different types of transistors (Strained Silicon Modulation field effect transistor, GaAs PHEMT). Experimental results show a good level of response under excitation at 0.
Autor:
Enrique Diez, Deepika Yadav, Kenji Watanabe, J. E. Velazquez, Taiichi Otsuji, Takuya Taniguchi, Yahya Moubarak Meziani, J. A. Delgado Notario, Vito Clericò
Publikováno v:
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was sub
Autor:
Enrique Diez, Jaime Calvo-Gallego, J. E. Velazquez, Yahya Moubarak Meziani, Elham Javadi, J. A. Delgado Notario, Kristel Fobelets
Publikováno v:
ResearcherID
We report on room temperature non-resonant detection of terahertz radiation using strained Silicon MODFETs with nanoscale gate lengths. The devices were excited at room temperature by an electronic source at 150 and 300 GHz. A maximum intensity of th
Autor:
J. E. Velazquez, Yahya Moubarak Meziani, M. Shahabdi, Elham Javadi, Nasser Masoumi, J. A. Delgado Notario
Publikováno v:
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
This paper reports on direct detection of electromagnetic radiation at 300GHz by using low cost commercially available GaAs high electron mobility field effect transistors (FETs) without any specially attached antennas. The effect of gate voltage bia
Autor:
Vito Clericò, J. A. Delgado Notario, Jesus E. Velázquez-Pérez, Enrique Diez, Kristel Fobelets, Elham Javadi, Taiichi Otsuji, Yahya Moubarak Meziani
Publikováno v:
Journal of Physics: Conference Series. 906:012003