Zobrazeno 1 - 10
of 38
pro vyhledávání: '"J. A. Dagata"'
Publikováno v:
Journal of Applied Physics; 8/15/2004, Vol. 96 Issue 4, p2386-2392, 7p, 7 Graphs
Autor:
S. P. McGlynn, J. A. Dagata
Publikováno v:
International Journal of Quantum Chemistry. 28:323-332
The frame transformation for an s-wave electron in the field of a degenerate symmetric top molecular ion core is used to interpret the results of a series of rotational bandshape fittings of one- and two-photon absorption spectra of methyl iodide in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a16e3a48e9c951bf18c62bcd81aac92d
https://doi.org/10.1002/qua.560280831
https://doi.org/10.1002/qua.560280831
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:297-301
ZrNx films are deposited by rf magnetron sputtering using a wide range of nitrogen flow rates to control film properties. Scanned probe microscope (SPM) oxidation is presented as a complimentary characterization tool to x-ray diffraction, colorimetri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94d6ff37b987a0b8448373ad87b780ba
https://doi.org/10.1116/1.2839856
https://doi.org/10.1116/1.2839856
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1340-1343
We report large area patterning of sputter-deposited FeN thin films by a high-voltage parallel writing technique that was recently developed to modify ZrN surfaces. Systematically patterned 15–100-nm-thick FeN films consisting of features with well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03a38f9239ed8233b2d06cf268429417
https://doi.org/10.1116/1.2167074
https://doi.org/10.1116/1.2167074
Publikováno v:
Thin Solid Films. :468-473
This paper discusses the growth kinetics of nanometer scale oxide structures grown by atomic force microscope (AFM) assisted lithography. The addition of nitrogen into the sputtering gas during zirconium deposition results in a crystalline ZrN materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb46903fc92fd8af0f9fe2c376f0eddb
https://doi.org/10.1016/s0040-6090(03)01252-5
https://doi.org/10.1016/s0040-6090(03)01252-5
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1188-1193
We show that atomic force microscope-induced oxide features can be formed reproducibly on both Zr and ZrN surfaces, and that the growth rate decreases rapidly with increasing time. There is an increase in oxide-feature height with humidity for both s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91cc5d7141c61933ba5c6223911fc79e
https://doi.org/10.1116/1.1560712
https://doi.org/10.1116/1.1560712
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1705-1708
Lateral dopant profiling of cleaved, passivated abrupt GaAs pn junctions using scanning tunneling microscopy/spectroscopy is demonstrated both in ultrahigh vacuum and air. A combination of forward‐ and reverse‐bias imaging and position‐dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c11c43f5d984c93103371e5363747a
https://doi.org/10.1116/1.579755
https://doi.org/10.1116/1.579755
Autor:
J. A. Dagata, J. Bennett
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:2597-2602
Time‐of‐flight secondary ion mass spectrometry has been applied to the characterization of P2S5/(NH4)2S‐treated and ultraviolet (UV)/ozone‐oxidized GaAs (100) surfaces. Emphasis is placed on investigating the structural and chemical character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bdc2f07c17aaf8948990b2fc24d82e1
https://doi.org/10.1116/1.578612
https://doi.org/10.1116/1.578612
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:474-480
In this report we discuss the results of a study undertaken to investigate the composition and thermal stability of ultraviolet/ozone oxidized, P2S5/(NH4)2S treated GaAs(100) surfaces. In particular, we have used x‐ray photoelectron spectroscopy an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77042270568c604fcb97c555477414f5
https://doi.org/10.1116/1.578759
https://doi.org/10.1116/1.578759
Publikováno v:
Applied Physics B Photophysics and Laser Chemistry. 51:443-450
The photodesorption and photodecomposition pathways of dimethylgold hexafluoroacetylacetonate, DMG (hfac), adsorbed on a cooled quartz substrate is reported for 222-nm KrCl excimer laser radiation. The time-of-flight (TOF) of neutral photoproducts, d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78dd2a435a37b103a8bc48c74c889efb
https://doi.org/10.1007/bf00329109
https://doi.org/10.1007/bf00329109