Raman and photoluminescence spectroscopy from N2+-ion implanted and α-irradiated and annealed GaN/sapphire

Autor: Linda C. Prinsloo, D.J. Brink, Thibaut Maurice, J. Camassel, Johan B. Malherbe, Herbert W. Kunert

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 181:286-292

GaN on sapphire (SA) was both implanted by N 2 + ions and α-particle irradiated from the GaN and substrate sides. Irradiation-induced vibration modes were observed in GaN. Raman spectra from the substrate reveal more drastic changes. Photoluminescen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89bd44c5ad2a3fb873288878e201be08
https://doi.org/10.1016/s0168-583x(01)00376-7

Strong and weak modes in polytypes of SiC

Autor: L. A. Fal’kovskii, J. Camassel

Publikováno v: Journal of Experimental and Theoretical Physics Letters. 69:268-272

The concept of an extended Brillouin zone is used to analyze the intensity of phonon modes observed in optical and Raman investigations of different polytypes of silicon carbide. It is shown that the relative intensity of these modes agrees with the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d2cef8ed9f2e6326fa022ca69c4d438
https://doi.org/10.1134/1.568016

Comparative investigation of ECR-RIE patterns on Si and C faces of 6H-SiC using a gas mixture

Autor: G. Lévêque, A.L. Syrkin, J. Camassel, R. Bonnot, Jean-Marie Bluet

Publikováno v: Diamond and Related Materials. 6:1463-1466

We report on the relative results of dry etching 〈0001〉 Si-like or 〈000 1 〉 C-like oriented faces of bulk natural 6H-SiC Lely crystals. For comparison, a 6H epilayer from Cree Research Inc. was also investigated. In all three cases, the initi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::faa31efa10a8785a03fdca7e4345384c
https://doi.org/10.1016/s0925-9635(97)00116-7

Optical investigation of quality improvement of 3C-SiC films after sacrificial oxidation process

Autor: J. Camassel, L. Di Ciocca, J. Pascual, C. Dezauzier, G. Arnaud, N. Becourt, F. Aisina

Publikováno v: Materials Science and Technology. 12:108-112

An initial investigation of the influence of the sacrificial oxidation process on the improvement of the quality of deposited SiC films is reported. The process is developed in three different steps: polishing of SiC heterostructures, heating in an O

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d94683dc264d34385e96fa72fe05d1f5
https://doi.org/10.1179/mst.1996.12.1.108

Acoustic microscopy investigation of porous silicon

Autor: J.M. Saurel, E. Massone, Thierry Taliercio, R.J.M. da Fonseca, J. Camassel, Alain Foucaran

Publikováno v: E-MRS Spring Conf.
E-MRS Spring Conf., 1994, Strasbourg, France
Thin Solid Films
Thin Solid Films, Elsevier, 1995, 255 (1-2), pp.155-158. ⟨10.1016/0040-6090(94)05643-R⟩
HAL

Porous silicon (PS) layers were obtained from (100) p+-type silicon substrate of thickness 290 μm with a resistivity of (1–8) × 10 −2 Ω cm and porosity values ranging from 20% to 55%. Microacoustic techniques were performed to investigate the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::272a9c6aa9682502e337201170de4667
https://doi.org/10.1016/0040-6090(94)05643-r