Zobrazeno 1 - 10 of 25 pro vyhledávání: '"J.‐Th. Zettler"'
1
Insitureflectance anisotropy studies of AlxGa1−xAs layers grown on GaAs(001) by molecular beam epitaxy
Autor: K. C. Rose, R. H. Williams, David I. Westwood, D. A. Woolf, S. J. Morris, J.‐Th. Zettler, W. Richter
Publikováno v: Journal of Applied Physics. 77:3115-3120
Reflectance anisotropy spectroscopy was used to examine the surfaces of AlxGa1−xAs layers grown on GaAs(001) by molecular beam epitaxy, where the Al mole fraction was varied across the whole composition range x=(0.0,0.25,0.50,0.75,1.0). All surface
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b1cb89f74fbd2e750dad3a26742dad1
https://doi.org/10.1063/1.358663
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2
In-situ reflectance anisotropy studies of ternary III–V surfaces and growth of heterostructures
Autor: Alois Krost, K. Ploska, M. Zorn, F. Reinhardt, J.-Th. Zettler, W. Richter, J. Jönsson
Publikováno v: Journal of Crystal Growth. 145:53-60
In this paper we describe reflectance anisotropy spectroscopy (RAS) studies of III–V ternary semiconductor alloys with the mixing of the group V element (GaAs - x P x ) as well as the group III element (In x Ga 1- x As). The surface anisotropy turn
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4bd7cf47d2612852402140d464f45be9
https://doi.org/10.1016/0022-0248(94)91028-6
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3
Surface processes before and during growth of GaAs (001)
Autor: K. Ploska, J. Rumberg, Markus Pristovsek, J.-Th. Zettler, David I. Westwood, Wolfgang Richter, F. Reinhardt, M. Zorn, R.H. Williams, J. Jönsson
Publikováno v: Journal of Crystal Growth. 145:44-52
GaAs(001) surfaces in both metalorganic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been studied under As-stabilization as well as during growth by reflectance anisotropy spectroscopy (RAS). During MBE growth simultaneously ref
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c798eb2beeff1e51a2a94871412fd52a
https://doi.org/10.1016/0022-0248(94)91027-8
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5
Spectrally resolved electroluminescence and photoluminescence in a-Si:H pin-diodes compared with optical multilayer calculations
Autor: J.-Th. Zettler, F. Becker, Heribert Wagner, T. Eickhoff, C. Beneking, R. Carius
Publikováno v: Journal of Non-Crystalline Solids. :675-678
Electroluminescence spectra were measured on a-Si:H pin-devices at various temperatures and forward-bias current densities. By comparison with optical calculations, information about the depth at which radiative recombination occurs was obtained. It
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ebbc7a68552b99b656643887f8aa5a6f
https://doi.org/10.1016/0022-3093(93)91088-k
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6
High precision UV-visible-near-IR Stokes vector spectroscopy
Autor: Wolfgang Richter, J.-Th. Zettler, L. Spanos, T. Trepk, Y. Z. Hu
Publikováno v: Thin Solid Films. 234:402-407
An ellipsometer utilizing the polarizer-sample-retarder-rotating analyser configuration measures all four elements of the Stokes vector. Consequently the ellipsometric parameters ψ and Δ as well as the polarization transfer factor D of the sample c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9250f809e37a32633e41643bb8b3a477
https://doi.org/10.1016/0040-6090(93)90295-z
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7
Modulated ellipsometry for characterization of multiple quantum wells and superlattices
Autor: J.-Th. Zettler, T. Trepk, H. Mikkelsen, Karl Leo, Heinrich Kurz, Wolfgang Richter
Publikováno v: Thin Solid Films. 233:112-116
Recently the capability of photomodulated spectroscopic ellipsometry for complete non-destructive optical characterization of GaAs/AlGaAs multiple quantum well (MQW) samples was demonstrated. This technique is particularly well suited for identifying
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8e657a61d5771ba5da55c3cafe93c62f
https://doi.org/10.1016/0040-6090(93)90070-6
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8
Ellipsometric Characterization of Layers on Transparent Semiconductor Wafers
Autor: L. Schrottke, J.-Th. Zettler
Publikováno v: physica status solidi (b). 163:K69-K74
By implementing the derived formulas in an appropriate computer program we are now able to characterize thin layers and layer systems on transparent substrates by means of ellipsometry. In the common case that the backside of the semiconductor wafer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6bf052e0162f2c344fed36893efc0e3f
https://doi.org/10.1002/pssb.2221630146
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10
Spectroscopic ellipsometric measurements of the dielectric function of germanium dioxide films on crystal germanium
Autor: J.‐Th. Zettler, S. Chongsawangvirod, E. A. Irene, Y. Z. Hu, Y. Q. Wang
Publikováno v: Applied Physics Letters. 61:1098-1100
From spectroscopic ellipsometry measurements in the 1.5–5.7 eV photon energy range we determined the complex dielectric function of thermally grown germanium dioxide in the 1.0–6.3 eV range. A Kramers–Kronig consistent dispersion formula utiliz
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba2a3069c44b10f19abadb699ca964ee
https://doi.org/10.1063/1.107680
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